| Allicdata Part #: | FDMS9409L-F085-ND |
| Manufacturer Part#: |
FDMS9409L-F085 |
| Price: | $ 0.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | NMOS PWR56 40V 2.8 MOHM |
| More Detail: | N-Channel 40V 65A (Tc) 100W (Tj) Surface Mount 8-P... |
| DataSheet: | FDMS9409L-F085 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.45948 |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6), Power56 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 100W (Tj) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3360pF @ 20V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101, PowerTrench® |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 65A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
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FDMS9409L-F085 is a high current, low voltage single N-channel input MOSFET. This device is designed for superior performance in power switches and load switches for DC/DC and converter applications, including automotive and industrial systems. This F085 series MOSFET has been optimized and tested at both SSS and SSSN parameters, and is found to provide a wide and stable output range, excellent thermal performance, and low turn-on and turn-off resistance.
The FDMS9409L-F085 providing high current and low voltage applications makes it a perfect fit for DC/DC converters and related applications. It features various switching signals across a range of voltages, allowing designers to select the best solution for their system. This MOSFET has low turn-on and turn-off resistance, which helps to boost efficiency by avoiding unnecessary drops in power levels, and it also offers superior thermal performance for optimal power delivery.
The FDMS9409L-F085 works on the principle of voltage-controlled operation. The gate terminal is used to control the MOSFET’s operation, and a small voltage applied to the gate will cause the MOSFET to conduct. As the gate terminal is insulated from the substrate of the device, the gate voltage can be used to control its conduction efficiency, with higher gate voltages resulting in higher conduction rates. This MOSFET is also capable of very low leakage current in the off-state due to its insulated gate oxide.
The FDMS9409L-F085 has been designed for maximum efficiency and reliability in DC/DC and related applications, and is capable of handling currents up to 5 A with peak avalanche currents up to 45 A. It offers excellent drain-source on-resistance, low gate charge, and low reverse transfer capacitance for improved system performance. Additionally, the device can operate over a wide temperature range, allowing it to be used in any environmental conditions.
The FDMS9409L-F085 is used in many automotive and industrial applications, including powertrain applications such as airbag systems, ignition systems, and engine control motors, as well as load switching applications for DC/DC converters. It can also be used for solid-state relays, signal amplifiers, and similar loads. With its easy-to-use design and optimal efficiency, the FDMS9409L-F085 is an ideal choice for designers seeking a low voltage, high current single N-channel input MOSFET solution.
The specific data is subject to PDF, and the above content is for reference
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FDMS9409L-F085 Datasheet/PDF