FDMS7694 Allicdata Electronics
Allicdata Part #:

FDMS7694TR-ND

Manufacturer Part#:

FDMS7694

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V POWER56
More Detail: N-Channel 30V 13.2A (Ta), 20A (Tc) 2.5W (Ta), 27W ...
DataSheet: FDMS7694 datasheetFDMS7694 Datasheet/PDF
Quantity: 1000
1 +: $ 0.11200
10 +: $ 0.10864
100 +: $ 0.10640
1000 +: $ 0.10416
10000 +: $ 0.10080
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS7694 is a Single enhancement mode Field Effect Transistor (FET) developed, using advanced high power, high voltage processes. This device features a symmetrical architecture, low-noise operation, and an integrated gate-drain ESD protection circuit. It is designed for use in high-power switching and regulation applications, with very low on-resistance.

The FDMS7694 is a vertical DMOS FET, which is characterized by its high speed, high voltage, low on-resistance and low drain-source Capacitance (CDS). It is available in a through-hole packaging or as a surface mount package, both with a range of gate power ratings. This device is suitable for use in high surge current applications, such as switch mode power supplies, motor drives, high voltage switching, and inverters.

The FDMS7694 is based on a single-channel Cell, with a built-in gate-drain ESD protection circuit. The ESD protection circuit uses a reverse body diode and a bidirectional overvoltage logic circuit to protect against sudden climatic conditions. It also features a maximum drain-source current capability of 5A and a maximum drain-source voltage rating of 1200V.

This device works on a three-electrode principle. The gate electrode forms the control channel and the source and drain electrodes provide the larger current flow for the device. The gate voltage is used to control the current flow through the channel, controlling the amount of current between the source and drain. The threshold voltage of the FDMS7694 is 5V and it has a positive temperature coefficient, meaning that the resistance of the device increases with increase in temperature.

The FDMS7694 also features an integrated bootstrap circuit that helps to reduce the effect of a single error on voltage regulation. This dual-level circuit maximizes the output voltage and reduces the noise on the switching feature. The bootstrap circuit works by applying a positive voltage below the main supply level, which in turn closes the gate and lowers the on-resistance of the device.

The FDMS7694 is an ideal choice for applications such as AC-DC converters, DC-DC converters, DC- AC inverters, high-voltage switching circuits, motor drives, and power switching and control. It is designed to provide reliable, low-noise performance and is suitable for use in harsh conditions. It can withstand up to 12 kV ESD and has a maximum junction temperature of 175°C.

The FDMS7694 has the advantage of low on-resistance, high voltage, and high-performance switching capabilities, making it an ideal solution for applications in the automotive and industrial markets. It is also compatible with most commonly used FETs. This device is cost-effective and provides reliable, efficient performance.

The specific data is subject to PDF, and the above content is for reference

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