FDMS86569-F085

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The FDMS86569-F085 is an N-Channel Field-Effect Transistor (FET) specifically designed for operation in applications where high power dissipation is necessary. The F085 model is part of the wider FDMS86569 family of FETs, and is ideally suited for use in applications such as power electronics and high-power amplifiers.

The FDMS86569-F085 can be operated at supply voltages of up to 50V, and power dissipation capabilities of a maximum of 680W. It employs the use of advanced technologies such as an optimized gate structure that greatly reduce the effects of gate noise on power dissipation. This allows for greater control and flexibility in application settings where switching frequencies are very high.

The FDMS86569-F085 FET utilizes innovative design techniques in order to optimize its power dissipation capabilities. It features a optimized structure design, where Gate Oxide is constructed in such a way as to allow for lower gate currents and thus improved noise immunity. Along with this, the F085 model also features a new optimized substrate that is designed to increase the overall thermal resistance of the device. All of these features allow the device to operate with excellent power efficiency at extremely high switching frequencies.

The FDMS86569-F085\'s operation is based on the principles of Metal-Oxide-Semiconductor Field-Effect Transistor. When a positive gate voltage is applied to its gate terminal, it forms a conducting channel between its source and its drain. As the voltage at the gate is increased, the width of this channel increases, allowing more current to flow from the source to the drain. When the gate voltage is reduced, the channel width decreases and the current flow is reduced.

The FDMS86569-F085 is an ideal solution for applications where high power dissipation is essential, such as in power electronic applications, motor controls, and high-power amplifiers. Its optimized gate structure and increased thermal resistance ensure efficient power dissipation and improved noise immunity. This makes it an ideal solution for applications which require high reliability and excellent performance.

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