| Allicdata Part #: | FDMS0312ASTR-ND |
| Manufacturer Part#: |
FDMS0312AS |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 18A PT8 |
| More Detail: | N-Channel 30V 18A (Ta), 22A (Tc) 2.5W (Ta), 36W (T... |
| DataSheet: | FDMS0312AS Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.12000 |
| 10 +: | $ 0.11640 |
| 100 +: | $ 0.11400 |
| 1000 +: | $ 0.11160 |
| 10000 +: | $ 0.10800 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1815pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Series: | PowerTrench®, SyncFET™ |
| Rds On (Max) @ Id, Vgs: | 5 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 22A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDMS0312AS is a type of single transistor commonly used in applications. It is a transistor-like component which is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. It is designed to switch between states quickly and reliably.
The FDMS0312AS is made up of three terminals: the gate, source, and drain. These are the interface points used to control the flow of current controlled by the transistor. The gate terminal, as the name suggests, acts as a gatekeeper, controlling the operation of the transistor. The source and drain are the current-carrying terminals, through which current is passed when the transistor is on.
In terms of its fields of application, the FDMS0312AS MOSFET can be used in a wide range of electronic applications, from switching and interference cancellation in audio to power control in motor drives, for controlling the power supply in computers, and for amplifying signals for various applications.
In terms of its working principle, the FDMS0312AS works by having the source and drain terminals connected in series, with the gate terminal connected separately. When a small current (or voltage) is applied to the gate, a larger current or voltage is created between the source and the drain. By controlling the voltage on the gate, the state of the transistor can be changed.
When the gate voltage is low, the voltage of the source and drain terminals is also low, thereby preventing current from flowing through the transistor. When the gate voltage is increased, the source and drain terminals are opened up and a larger current can flow through the transistor. This has the effect of amplifying and manipulating the voltage and current flowing through the transistor.
By using combinations of these switches, complex circuits can be created to carry out a range of functions, such as amplification, signal processing and other operations. Furthermore, the FDMS0312AS MOSFET is capable of carrying out extremely fast switching operations, making it suitable for high-speed applications such as digital signal processing.
Overall, the FDMS0312AS MOSFET is a versatile and reliable switching device which can be used in a wide range of applications, from amplification to switching operations, from controlling power supply in computers to high-speed signal processing. This makes it a popular choice for electronic applications.
The specific data is subject to PDF, and the above content is for reference
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FDMS0312AS Datasheet/PDF