FDMS3626S Discrete Semiconductor Products

The FDMS3626S is an array of four N-Channel Field Effect Transistors (FETs) with integrated protection in a 14-pin dual-in-line plastic (DIP) package. This array contains two dual FETs with 50 Ohm on-resistance and two single FETs with 25 Ohm on-resistance. Each FET has its own integrated protection for over-voltage, over-current, electrostatic discharge (ESD) and thermal shutdown to prevent damage to the device.

The FDMS3626S is used in many different applications including RF power amplifiers, power switching circuits, voltage regulators, and DC-DC converters. It can also be used as logic level shift circuits, motor drive circuits and low noise switching circuits. The FDMS3626S has a wide range of operating temperatures from -55°C to +150°C.

The FDMS3626S works by utilizing the properties of gate dielectrics. The gate dielectric acts as an insulator between the source and drain terminals. When a voltage is applied to the gate terminal, it creates a depletion region which causes a voltage between the source and drain terminals. This is known as the cutoff region when no current is passed. By varying the voltage on the gate terminal, current can be passed through the FET.

The FDMS3626S can provide a wide input voltage range from 2.0V to 15V and a low on-resistance of 25 to 50 Ohms. It also has a high-frequency operation of up to 10MHz, making it ideal for high speed switching. The FDMS3626S also has an integrated ESD protection of up to 8kV and is rated for up to 15A of current.

The FDMS3626S is a versatile array of FETs which can be used in many different applications. Its wide input voltage range, low on-resistance and high-frequency operation make it ideal for high-speed switching applications. The integrated protection of the FETs makes it reliable and safe to use in multiple applications.