FDMS9600S Discrete Semiconductor Products |
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| Allicdata Part #: | FDMS9600STR-ND |
| Manufacturer Part#: |
FDMS9600S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 30V 12A/16A POWER56 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 12A, 16A 1W Su... |
| DataSheet: | FDMS9600S Datasheet/PDF |
| Quantity: | 1000 |
| Series: | PowerTrench® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 12A, 16A |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1705pF @ 15V |
| Power - Max: | 1W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-MLP (5x6), Power56 |
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The FDMS9600S is a family of Field-Effect Transistor (FET) Arrays. It is manufactured by Philips Semiconductor Inc, and falls into the category of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). The FDMS9600S has a wide range of applications and its working principle is based on several principles of physics, making it well-suited for both large-scale industrial as well as simple everyday applications.
At the center of the FDMS9600S is a series of four FETs connected in parallel. Each transistor has three terminals: Drain, Source and Gate. The source terminal of each FET is connected to the gate of the adjacent FET so that the source of one FET is the gate of the next, and so on. This configuration is known as a ‘gate array’ and is used in several fields including semiconductor manufacture. When the gate array is connected to a power source, electrons flow from the source to the drain, allowing current to flow through the transistor.
The FDMS9600S is a high-performance yet low-cost device for a range of applications. Its particular suitability for industrial applications is due to its power efficiency. Each transistor can operate at either high or low voltage and is able to handle large amounts of power with minimal losses. Furthermore, the FDMS9600S boasts a fast switching speed and a wide operating temperature range. This makes it ideal for applications that tolerate high speeds and require enormous amounts of power.
The FDMS9600S performs its functions via several principles of physics. When a voltage is applied to the gate of the transistor, an electric field is created that causes electrons to flow from the source to the drain. This current flow, known as source-drain current, is the principle by which FET transistors work. In addition to the source-drain current, the FDMS9600S also uses capacitance-voltage and threshold voltage characteristics of the FETs to ensure that the device behaves predictably even in the face of varying conditions.
The FDMS9600S is used in a wide range of applications, from microwave amplifiers and processors to solar cell arrays and even home automation systems. In industrial applications, the FDMS9600S is often used to create high-performance motor control systems, process sensors, and more. The device’s high power efficiency means that it is also a popular choice for motor drive systems, inverters and other high-power applications. Its capabilities also make it suitable for modern home automation systems.
The FDMS9600S is an advanced, yet cost-effective FET array that is suitable for a wide range of applications. Its combination of high performance and low cost make it a popular choice for industrial and home applications, and its power efficiency makes it a great choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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FDMS9600S Datasheet/PDF