FDS4501H Allicdata Electronics

FDS4501H Discrete Semiconductor Products

Allicdata Part #:

FDS4501HFSTR-ND

Manufacturer Part#:

FDS4501H

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 30V/20V 8SOIC
More Detail: Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1...
DataSheet: FDS4501H datasheetFDS4501H Datasheet/PDF
Quantity: 2500
1 +: $ 0.26400
10 +: $ 0.25608
100 +: $ 0.25080
1000 +: $ 0.24552
10000 +: $ 0.23760
Stock 2500Can Ship Immediately
$ 0.26
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The FDS4501H is an application field transistor and an enhancement mode MOSFET array manufactured by Fairchild Semiconductor. This device can be used in a variety of applications, including audio amplification, power management and switching, and controlled current sources. It comes in a 4-pin SOT23 package and is capable of operating at up to 30V between the drain and the source.

The FDS4501H array consists of four MOSFETs (metal-oxide semiconductor field-effect transistors), each comprising a source and a drain connected to each other by a semiconductor channel. It has an enhanced threshold voltage, low drain-source on-state resistance, and low gate-source leakage current. It is also equipped with a junction-gate structure that provides fast switching and low gate-charge characteristics.

The way in which the FDS4501H works is based on the basic principles of MOSFETs. When a positive signal is applied to its gate, a channel is formed between the source and the drain, allowing electrons to flow through. When the gate is left open, the electrons move freely through the channel and current flows. When the voltage across the drain and the source drops below the device’s threshold voltage, the channel shuts off and the current ceases to flow.

The FDS4501H can be used in power management and switching applications, due to its ability to handle high current levels and switch quickly. This can be useful in a variety of applications, such as automotive circuits and home appliances. It is also suitable for audio amplification, thanks to its low on-state resistance and low gate-source leakage current. Furthermore, its junction-gate structure provides fast switching and low gate-charge characteristics.

In summary, the FDS4501H is a versatile application field transistor and an enhancement mode MOSFET array, suitable for a wide variety of demanding applications. It offers an enhanced threshold voltage, low on-state resistance, low gate-source leakage current, fast switching and low gate-charge characteristics. It can be used in power management and switching, as well as audio amplification applications, making it an invaluable device for many applications.

The specific data is subject to PDF, and the above content is for reference

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