Allicdata Part #: | FDS4435BZ-F085TR-ND |
Manufacturer Part#: |
FDS4435BZ-F085 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 8-SOIC |
More Detail: | P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | FDS4435BZ-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.27082 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1845pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS4435BZ-F085 is a type of metal-oxide-semiconductor field effect transistor (MOSFET), more accurately described as a junction insulated gate field effect transistor (JIGFET). FDS4435BZ-F085 is a single n-channel MOSFET that operates on 4.5-14 Volt Vgs. It is designed with an advanced power MOSFET process for high performance, and has high dense cell design for low Rds(on). FDS4435BZ-F085 has fast switching speed and high reliability, enabling it to be used in applications from low to high power switching.
Being a type of MOSFET, FDS4435BZ-F085 works by modulating an electrical charge, rather than controlling and flipping the state of the switch on and off. In essence, it works through applying a current to an insulated gate. This creates a voltage in the gate region and creates a voltage controlled current between the source and drain. Since the gate region is insulated, no current is allowed to flow between the gate and the source, allowing the voltage at the gate to be accurately varied, thereby allowing precise control of the drain current.
Power MOSFETs like FDS4435BZ-F085 have become increasingly important in modern electronics, particularly in high power switch-mode power supplies, motor drives, and in power management. Furthermore, the use of FDS4435BZ-F085 in the areas of audio amplification, and in high power RF amplifiers and cellular phones is increasing.
FDS4435BZ-F085, being able both to handle large current loads and switch very quickly, can be used for a wide variety of applications. It is typically used for high current applications such as motor control, LED lighting, switch mode power supplies, and voltage regulation. Additionally, it is used in portable devices and consumer electronics, as it can maintain a low on-resistance while ensuring a high level of switching speed. It is also used in automotive, industrial and medical systems, as it has a high temperature operating range.
The main feature of the FDS4435BZ-F085 is its low Rds(on). This low resistance allows very small signal levels to be converted into large voltage or current levels. It also has a small on-resistance, meaning less power is drawn by the circuit and the device can operate at higher efficiency. Additionally, the device has a fast switching speed, allowing it to quickly switch from one state to another, which is necessary in high power applications.
Overall, FDS4435BZ-F085 is a reliable, efficient, and powerful MOSFET, capable of handling both high currents and fast switching. It is suitable for various low and high power applications, including motor control, LED lighting, switch mode supplies, audio amplification and more. With its advanced power MOSFET process, low on-resistance, and fast switching speed, it is easy to see why FDS4435BZ-F085 is a popular choice for a wide range of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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