FDS4070N3 Discrete Semiconductor Products |
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Allicdata Part #: | FDS4070N3TR-ND |
Manufacturer Part#: |
FDS4070N3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 15.3A 8-SOIC |
More Detail: | N-Channel 40V 15.3A (Ta) 3W (Ta) Surface Mount 8-S... |
DataSheet: | FDS4070N3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2819pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 15.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.3A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDS4070N3 is a 60-volt N-Channel FET with an integrated Schottky diode, commonly used for high side switching in automotive applications such as DC-DC converters, power supplies, motor drives, and motor control circuits. The device is much smaller than comparable resistive or diode-OR’ed FETs to save space on a circuit board and is also AEC-Q101 qualified.
This FET contains an integrated Schottky diode for high-side switch applications. The diode is a non-polar device with a low forward voltage, and can be used to reduce conduction losses and provide reverse polarity protection. The device also features low gate charge and low gate resistance, as well as a fast switch-on and protection feature against simultaneous load and short-circuit conditions.
The FDS4070N3 is a high power MOSFET, with a maximum current rating of 11A and a maximum voltage rating of 60V. It operates with a very low on-state resistance of 0.096Ω and is rated for a maximum power dissipation of 44W. It features an integrated Schottky diode, which improves switching performance and reduces conduction losses.
The working principle of the FDS4070N3 is based on the basic MOSFET operation. The device consists of a P-type silicon substrate with a layer of N-type material over the substrate. When a positive gate voltage is applied, it creates an electric field, which in turn increases the number of electrons in the channel between the N-type layer and the substrate, allowing current to flow between the source and drain terminals.
The FDS4070N3 is ideal for high side switching applications in automotive electronics. The integrated Schottky diode provides a fail-safe operation and reverse polarity protection. Its low on-state resistance, moderate gate charge, and low gate resistance make it suitable for high frequency switching applications. Its AEC-Q101 qualification makes it perfect for harsh automotive conditions.
In conclusion, the FDS4070N3 is an ideal device for automotive high-side switching applications. It offers low on-state resistance, a fast switch-on, reverse polarity protection, and integrated Schottky diode. The device is AEC-Q101 qualified, which makes it suitable for use in harsh automotive environments.
The specific data is subject to PDF, and the above content is for reference
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