FDS4935

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The FDS4935 array is a N-Channel enhancement mode Field Effect Transistor (FET). It is commonly used in high-frequency power supplies, automotive amplifiers, and power regulator circuits. It is designed to operate over a wide voltage range of 6V, making it an attractive choice for both low and high-voltage applications. The FDS4935 array consists of seven independent channels, each capable of handling up to 8A current.

The FDS4935 is capable of both linear and switching based control. Linear control makes use of a closed-loop feedback system to regulate the voltage and current outputs of the array. This ensures that the output is always set to the desired value. This makes the FDS4935 a popular choice for applications requiring precise control of output power. Compared to traditional mechanical methods of regulation, the FDS4935 can produce highly stable results with minimal power dissipation.

The FDS4935 array also features a built-in drain-source current limit. This helps to protect the device from current over-heating, as well as providing a safeguard against voltage surges and shorts. The FDS4935 also comes with an adjustable over-temperature protection. This feature helps to prevent damage to the device in high-temperature and high-current applications.

The working principle of the FDS4935 lies in its gate structure. The gate of a FET is the primary control for the transistor. When a voltage is applied to the gate, current begins to flow from the source to the drain. The amount of current is determined by the amount of voltage applied to the gate, and the resistance of the channel between the source and the drain. By controlling the voltage on the gate, it is possible to control the amount of current flowing through the channel.

The FDS4935 array features an integrated gates-source voltage (VGS) control system. This system allows for precise control of the gate voltage, and thus the associated current. It also features an adjustable threshold voltage (VTH) which allows the user to adjust the threshold voltage required for the FET to turn-on. This ensures that the maximum current level is always safely maintained. The FDS4935 array also features an adjustable drain-source capacitance (CDS) which allows for further fine-tuning of the FET’s operating parameters.

In sum, the FDS4935 array is a flexible N-channel FET suitable for a wide range of applications. It provides precise control of output voltage and current, and its built-in protection features protect against over-temperature and current overload. Furthermore, its adjustable gate, threshold, and drain-source capacitance parameters make it an ideal choice for high-precision applications.

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