FDS4685 Discrete Semiconductor Products

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The FDS4685 is a single N-channel Field-Effect Transistor (FET) that enables the design of high-voltage amplifier circuits, sound amplifiers and radio frequency amplifiers. It is an integrated device with a high gate-source voltage rating, low on-resistance and fast switching. This device meets the different and critical requirements of motor control and power management applications. According to its features and specifications, it is suitable for use in audio amplifiers, motor drives, switching applications, power switches, current sensing and regulation.

The FDS4685 is a trench-type connection FET. It utilizes the industry-standard Super-Junction MOSFET technology and is rated for an absolute maximum drain-source voltage of 55V. It offers a low input capacitance, an excellent gate-source threshold voltage, a low gate-source input resistance and fast infrared source-drain diode switching. This device also has an internal body diode, resulting in superior tolerance to power surges. The FDS4685 is offered in a TO-220 package.

There are many applications for the FDS4685, including power switches, motor drives and sound amplifiers. This device makes it possible for system designers to design high-voltage amplifier circuits with excellent performance. The FDS4685 also ensures reliable and fast switching for motor control and power management, for example, in applications requiring a high speed of control. The device also features a low input capacitance and low on-resistance, making it suitable for audio amplifiers and current sensing and regulation.

The FDS4685 is a vertically-integrated MOSFET device, which draws its power from a high voltage drain-source voltage. The transistor has an integrated gate, which is connected to the source terminal, an internal body diode, and an output terminal connected to the drain. The MOSFET can be operated in either enhancement or depletion mode, depending on the input signal fed to the gate terminal. In enhancement mode, when a positive input is applied to the gate, the transistor is turned on, and the drain current increases. When a negative input is applied, the transistor is turned off and the drain current decreases.

Another feature of the FDS4685 is its lowgate-source voltage, which prevents cross-talk between amplifiers operating from different power supplies. This makes it the ideal device for designing audio amplifiers and motor control circuits with multiple power supplies. The FDS4685 can also be used to easily control high-voltage applications. This is especially useful for applications involving power switches, current sensing and regulation.

In summary, the FDS4685 is a single-channel N-channel Field-Effect Transistor that is rated for an absolute maximum drain-source voltage of 55V. It is suitable for high-voltage amplifier circuits, sound amplifiers and radio frequency amplifiers, as well as motor control and power management applications. This device offers excellent performance, fast switching, low input capacitance and low on-resistance. The FDS4685 is an ideal solution for audio amplifiers, power switches, motor drives and current sensing and regulation.

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