Allicdata Part #: | FDS4770-ND |
Manufacturer Part#: |
FDS4770 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 13.2A 8SOIC |
More Detail: | N-Channel 40V 13.2A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS4770 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2819pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 13.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.2A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A FDS4770 Field Effect Transistor (FET) is a type of transistor that utilizes a solid-state semiconductor device for switching and amplifying electrical signals. It is a single-gate FET device and commonly used in many industrial, medical, and consumer electronics applications. This article will discuss the application field and working principle of the FDS4770.
FETs are commonly used in many applications that require high input and low output impedance. This makes them ideal for applications such as voltage and current amplifiers, high-frequency switching, and power management. The FDS4770 is a single-gate FET device and is used in fields such as medical electronics, network and telecom systems, automotive electronics, and consumer electronics.
The FDS4770 is a unipolar device with a single gate terminal and is made up of an uncontrolled source (S) and a drain terminal (D) along with three other terminals. As with all FETs, the FDS4770 also has a gate terminal which is used to control the output. The device is designed to provide very high input impedance and has a very low control current so that it is able to operate at high speeds. It can also handle high voltage (up to 500 volts) and high power (up to 50 amps).
The working principle of the FDS4770 is based on the principle of field effect. Field effect is a phenomenon in which the voltage applied at the gate terminal of a FET has an effect on the source-drain current. When a positive voltage is applied at the gate terminal, the electrical field between the source and the drain terminals of the device increases and therefore, the source-drain current increases as well. On the other hand, when a negative voltage is applied at the gate terminal, the source-drain current decreases. The source-drain current of the FDS4770 can be varied with the voltage applied to its gate terminal.
The FDS4770 is a unique, single gate FET device that offers robust performance in a variety of applications. Thanks to its high input impedance and low control current, the FDS4770 is able to operate at high frequencies and high voltages. It is also highly reliable and can be used in a wide range of applications, from medical and telecom systems to automotive electronics and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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