FDS4953 Allicdata Electronics
Allicdata Part #:

FDS4953TR-ND

Manufacturer Part#:

FDS4953

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 30V 5A 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 5A 900mW Surfa...
DataSheet: FDS4953 datasheetFDS4953 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The FDS4953 is an array of N-channel enhancement-mode PowerTrench® MOSFETs from Fairchild Semiconductor. It is designed to provide improved system performance, higher current handling capability and reduced power dissipation in space-constrained consumer, industrial and computing applications. The FDS4953 is available in the ultra-small SO PowerPak® package and the robust PowerPAK® MLP family. Both packages make it an excellent choice for high-end consumer and compute applications with tight board spaces.

The FDS4953 is well suited for board-level power supply, system power management applications and DC/DC conversion applications. The device helps to improve system stability and offers reduced power dissipation and improved power density. The integrated circuit features eight N-channel MOSFETs in a single package. Each MOSFET has an individual output resistor and gate drive control input, and the device can be used as either a low-side switch or a high-side switch.

The FDS4953 requires a relatively low gate drive current of 4.5 mA. It has a low on-state resistance of 0.17 Ω (typical) and a high junction temperature of 175°C. It also features an electrostatic-discharge (ESD) protection level of up to 2 kV. The operating voltage range of the device is from 2 V to 6 V.

The power switch array is designed to improve the performance of a system by controlling the area occupied by the switch. The FDS4953 has high density and offers efficient power management. The device is designed to control eight N-channel MOSFETs with minimal switching times and low dead times. Additionally, the FDS4953 features integrated gate drive outputs, gate signal inputs, gate signal outputs and gate-to-source circuits.

The FDS4953 is designed with various circuit protection features, including current-limiting protection, thermal shutdown, ESD protection and integrated circuit protection. The current-limiting protection will limit the current to a predetermined maximum during an overload condition. The thermal protection prevents damage due to thermal overstress. The ESD protection helps protect the external circuitry from static damage. The integrated-circuit protection prevents external pins from damaging the internal circuitry of the device.

The FDS4953 is suitable for a wide variety of applications, including power supplies, motor drives, DC/DC converters, and power management applications. Its efficient design and integration of multiple functions make it an ideal solution for space-constrained consumer, industrial and computing applications.

The specific data is subject to PDF, and the above content is for reference

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