FDS4072N7 Discrete Semiconductor Products

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The FDS4072N7 is a N-channel enhancement mode MOSFET. It is designed for use in low voltage applications such as audio, power, battery and motor drives. The FDS4072N7 features a very low gate charge, making it suitable for high speed switching applications. It also offers a low drain-source on resistance that paves the way to excellent performance when used in current limiting circuits, relatively low operating temperature, pleasing drive characteristics and superior noise immunity. The FDS4072N7 is an ideal choice for applications where size and power matters.

The FDS4072N7 is a three-terminal device consisting of a gate, a drain and a source electrode. In operation, the device may be thought of as similar to a simple electronic switch. The gate is the control terminal, and when a gate-to-source voltage (VGS) is applied, the FDS4072N7 will be turned “on”. This connection between the source and the drain is known as a conducting channel. The FDS4072N7 is designed to provide a high output current at a low source-drain voltage, making it ideal for power switching applications. When the VGS goes below a certain threshold, the FDS4072N7 is turned “off” and the connection between the source and the drain is disconnected.

The FDS4072N7 has an RDS(on) rating of 2.

The FDS4072N7 is suitable for use in audio, power, battery and motor drive applications. In addition, the ultra-low gate charge make it suitable for use in high speed switching applications. It can be used to limit current in both AC and DC circuits. The FDS4072N7 can also be used as an active load switch in current-limiting circuits and offers superior noise immunity and drive characteristics. The FDS4072N7 is available in a variety of packages and can be used in virtually any application that requires a small footprint and low-voltage operation.

The FDS4072N7\'s operating principle is based on the application of a voltage at the gate terminal to create a conducting channel between the source and the drain. When a positive voltage is applied to the gate terminal, a conductive path is established between the source and the drain and current can flow between them. As the applied gate voltage increases, the source-drain current also increases. When the gate voltage is insufficient to create a conducting channel, the FDS4072N7 is off, and there is no current flow between the source and the drain.

The FDS4072N7 is an enhancement mode MOSFET and its gate is isolated from the source and drain terminals. There is no need for a gate bias voltage to turn the MOSFET on or off; it can be controlled simply by an input voltage applied to the gate. The FDS4072N7 is an ideal device for use in audio, power, battery and motor drive applications. It can also be used in current limiting circuits as an active load switch, providing superior noise immunity and drive characteristics.

Overall, the FDS4072N7 is a great choice for small footprint, low voltage MOSFET applications. Its low gate charge and low source-drain on resistance open up numerous opportunities for applications in audio, power, battery, motor drive and current limiting circuits. With its superior noise immunity and drive characteristics, the FDS4072N7 is a must-have in any engineer\'s toolbox.

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