FDS4675-F085 Discrete Semiconductor Products

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FDS4675-F085 is an enhancement mode, N-channel Field-Effect Transistor (FET). It is designed for use in audio, high frequency, and low voltage power management applications, such as load switching, level shifting, and gate driving. This device has been designed to provide faster switching speeds, higher power density, and smaller footprint than existing FET devices.

The FDS4675-F085 has a Drain-Source breakdown voltage of 40V and a Gate-Source breakdown voltage of 6V. It can handle up to 1A of drain current, and has an input capacitance of approximately 15pF. The on-resistance of this device is exceptionally low, and can reach down to 420mΩ at a gate voltage of 4.5V. This device is capable of switching frequencies up to 5MHz, making it ideal for use in high-bandwidth applications.

The FDS4675-F085 is built using a novel structure that features a combination of thick-film and thin-film techniques. This allows for a higher power density and lower on-resistance than comparable devices. This device has also been designed to dissipate less power than existing FETs, making it ideal for use in applications that have limited power or space.

The working principle of the FDS4675-F085 is relatively simple. When a voltage is applied to the gate terminal, it creates an electric field. This electric field induces a current between the drain and source terminals, creating a voltage drop. This voltage drop is what provides the switching action of the FET. The amount of current that can flow depends on the amount of voltage applied to the gate terminal, and this can be used to control the operation of the FET.

The FDS4675-F085 is a highly optimized FET device that is suitable for a wide range of applications. It offers faster switching speeds, higher power density, and smaller footprint than comparable FETs, making it an ideal choice for high-bandwidth applications. This device is also well suited for use in audio, high frequency, and low voltage power management applications.

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