FDS4465-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDS4465-F085TR-ND |
Manufacturer Part#: |
FDS4465-F085 |
Price: | $ 0.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 8-SOIC |
More Detail: | P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS4465-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.69561 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8237pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 4.5V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 13.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDS4465-F085 is a N-channel enhancement mode MOSFET that operates in a wide range of voltages and currents. It is used as an amplifier, switch, rectifier, regulator, and voltage regulator. The FETs, or field effect transistors, are semiconductor devices that provide very high output gain and switching speed. They are also widely used in digital logic and communication systems. The use of FETs is an important part of digital electronics because they allow the manipulation of digital signals with minimal power consumption.
FDS4465-F085 devices are best suited for high-speed and high-efficiency digital applications. They are typically used in low-power radio-frequency (RF) circuits, as well as in transceiver, analog, and mixed signal systems. This device is suitable for operations at up to 25V drain-source, with a drain current of 6A (rated) and a source current of 2A (maximum). It has an RDS(on) low, with a maximum value of 0.0021Ω, making it ideal for high speed switching.
The application field of this MOSFET is in the telecommunications and datacom industry, and other industrial applications such as automotive, consumer electronics, medical, and aerospace. They are used to switch power and data signals at high speeds. Their low on-resistance and high frequency response make them useful for wireless communication systems, modems, mobile phones, digital TV receivers, and other devices.
The working principle of this MOSFET is the same as any other FET. It consists of four terminals: source, drain, gate, and body. The source and drain have a p-n junction whereas the gate is isolated from the rest of the device. When a voltage is applied to the gate, it creates a small electric field that causes electrons to travel from the source to the drain. This results in a current flow between the source and the drain. The body is used to adjust the amount of current flowing through the device by controlling the magnitude of the electric field generated by the gate.
The FDS4465-F085 is a reliable, high power and high speed MOSFET. It can be used in a wide range of applications such as switching power and data signals, regulating voltage and current, and acting as an amplifier or rectifier. It has a wide operating voltage range, low on-resistance, and high frequency response, making it suitable for many high power and high speed applications.
The specific data is subject to PDF, and the above content is for reference
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