FDS4410

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1340pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	13.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FDS4410 is an N-channel power MOSFET which is renowned for its capacity to provide a large amount of power at a relatively low voltage. The FDS4410 is a vertical D-MOSFET (dual-metal oxide semiconductor field effect transistor) specifically designed for high-current, low-voltage applications. The device is based on a unique vertical power MOSFET structure, which provides a better balance between low on-resistance and high breakdown voltage, making it ideal for a range of power switching applications. These features, along with its low gate charge, make the FDS4410 an ideal choice for power supply design and power control applications.The working principle of the FDS4410 is relatively simple to understand. When a voltage is applied to the gate of the transistor, an electric field is generated between the gate and the silicon substrate, which results in the flow of charge carriers. These charge carriers are then attracted to the gate, which increases the electric field between the gate and the source. This field increases the depletion of the P-channel region and reduces the conductivity of the source-drain channel, resulting in a voltage drop across the transistor.In terms of its application field, the FDS4410 can be used in a wide range of power control and switching applications. Due to its low on-resistances and high breakdown voltage, it can be used in automotive, computer, and industrial applications, including boost converters and DC to DC applications. The device is also ideal for SMPS (switched-mode power supply) applications, as its MOSFET structure allows for high power efficiency and low power dissipation, making it an ideal choice for a wide range of power control applications.One of the major benefits of using the FDS4410 is its low gate charge, which allows for high-speed switching times. This low gate charge makes the transistor an ideal choice for high-frequency applications, such as AC-DC or DC-DC converters. Additionally, the low gate charge also helps to reduce power dissipation, which further increases the efficiency of the device.The FDS4410 can also be used in a variety of other applications, such as in DC fan control, speed control of DC motors, and for applications that require overvoltage protection. Additionally, it can be used in solar power systems, DC power supplies, and high-frequency DC-DC converters.Overall, the FDS4410 is an excellent choice for power control and switching applications, due to its combination of low gate charge, low on-resistance, and high breakdown voltage. Furthermore, the device is well-suited for a variety of applications, including automotive, computer, and industrial applications, making it an ideal choice for a broad range of power control and switching needs.

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