Allicdata Part #: | FDS4480TR-ND |
Manufacturer Part#: |
FDS4480 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 10.8A 8SOIC |
More Detail: | N-Channel 40V 10.8A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS4480 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1686pF @ 20V |
Vgs (Max): | +30V, -20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.8A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS4480 is a high voltage N-channel enhancement mode MOSFET designed for DC to DC conversion, switch-mode power supply, and high frequency switching applications. This device can be operated as both a linear and a non-linear regulator. It is available in a variety of packages, allowing for flexibility in design.
The FDS4480 is a depletion mode MOSFET, which is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is constructed using an N-type silicon substrate and a gate electrode. A metal contact layer called the source forms one side of the substrate, and the remaining layers form the drain. The gate, which forms the other side of the substrate, is connected to the source by an insulated gate electrode.
When a voltage is applied to the gate, electrons are attracted to the gate and the substrate underneath it. This creates an electric field, which is an area of electrical potential between two conductors, across the two sections of the substrate. This electric field attracts electrons from the source to the drain, creating a current flow between the two.
The FDS4480 has a threshold voltage of 4 volts, which is the minimum voltage the gate must be supplied with in order to turn the device on. As the voltage increases, the current increases in a linear fashion, allowing for precise control of the amount of current being passed through the device. It also has a maximum voltage rating of 65 volts, which makes it suitable for use in both low and high voltage applications.
The FDS4480 can be used in a variety of applications, including DC to DC conversion, switching power supplies, high frequency switching, and voltage regulation. It is also used in automotive applications, such as cruise control, engine management, and collision avoidance systems.
The FDS4480 offers a variety of benefits, including a low on-resistance, high peak transconductance, low switching times, and a wide voltage range. These features make it ideal for use in a variety of applications, from power management to signal conditioning.
In conclusion, the FDS4480 is a high voltage N-channel enhancement mode MOSFET designed for DC to DC conversion, switch-mode power supply, and high frequency switching applications. It has a variety of advantageous features, making it suitable for use in a number of applications.
The specific data is subject to PDF, and the above content is for reference
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