Allicdata Part #: | FDS4435BZTR-ND |
Manufacturer Part#: |
FDS4435BZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 8.8A 8-SOIC |
More Detail: | P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | FDS4435BZ Datasheet/PDF |
Quantity: | 12000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1845pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS4435BZ Application Field and Working Principle
The FDS4435BZ is a type of Field Effect Transistor (FET) that is commonly used in a wide range of applications, including power electronics, audio amplifiers, and anything that requires high current control. The FDS4435BZ is a single-channel enhancement mode N-channel FET with a drain-source breakdown voltage of 30V, a drain-source on-state resistance of 1.2 ohms, and a continuous drain current rating of 42A. This FET is suitable for use in a wide range of applications, including automotive power stages, DC motor control, and power management systems.
In order to understand the working principle of the FDS4435BZ, it is important to first understand the basic concepts of a FET. FETs, like all solid-state devices, use a semiconductor material to control the flow of electrons. It works by turning a control voltage into an electric field, which then modulates the flow of electrons through the FET. When a gate voltage is applied to the FET’s gate terminal, a signal current flows from the gate to the drain, which turns on or off the FET.
The FDS4435BZ is an N-channel FET, meaning that when the voltage on the gate terminal is increased, the current flow from the drain terminal to the source terminal is increased. This means that the FDS4435BZ can be used in applications where current control is required, such as switching power supplies, DC-DC converters and motor control. Additionally, the device is rated for peak avalanche energy, meaning it can handle high-voltage transients without failing.
The FDS4435BZ also has an unmatched OFF-state gate leakage current rating of 0.1µA at 25V. This is important to keep in mind when using high-frequency power switches, as it prevents the FET from self-heating, a common issue with other high-frequency FETs.
One of the main advantages of using the FDS4435BZ is its low on-state resistance. The device has an on-state resistance of only 1.2 ohm, meaning it can efficiently transfer large amounts of current with minimal power losses and cost. Additionally, the device is rated for peak avalanche energy, meaning it can handle high-voltage transients without failing.
Overall, the FDS4435BZ is an excellent choice for applications that require high current control, such as automotive power stages, DC motor control, and power management systems. The device is easy to use and is rated for peak avalanche energy, which makes it highly reliable and robust in demanding environments.
The specific data is subject to PDF, and the above content is for reference
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