Allicdata Part #: | FDS4780-ND |
Manufacturer Part#: |
FDS4780 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 10.8A 8SOIC |
More Detail: | N-Channel 40V 10.8A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS4780 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1686pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 10.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.8A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDS4780 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in a Single (Isolated) package - designed with Field Processing and Sausage technology. It is a high voltage, low RDSon (resistance between drain and source), high dv/dt (Rate of change of voltage on the device) and low leakage N-Channel MOSFET designed for power supply and motor control applications where fast switching is required.
The FDS4780 is designed to address system power losses, high power consumption, and thermal issues of the power stage. This device features an optimized body diode, low input capacitance, low gate charge, and low gate input resistance, ideal for low power consumption applications. The built-in source-to-drain diode also provides optimized reverse-drain to source voltage operation.
The FDS4780’s working principle is based on the Field Effect Principle which is a transistor operation mode where a region of one type of charge carrier (such as electrons or holes) is applied to the transistor’s semiconductor. This charge creates an electrical field which modulates the current flowing through the transistor, allowing for much higher currents than bipolar transistors and lower on-state resistance than metal oxide semiconductor field-effect transistors.
The FDS4780 is used primarily in power supply and motor control applications. The low on-resistance and low capacitance benefits of the device enable fast switching applications with minimal losses. In addition, the device can be used for logic level and RF applications, due to its low gate input and output capacitance. The FDS4780 is also well suited for power converters, motor control, and many other applications. Some of the application fields that FDS4780 can be used to serve are Automotive, IT, Industrial, and Security and Communication systems.
The FDS4780 represents a new level of MOSFET performance and reliability, as well as providing excellent stability in high dv/dt, ESD and turn-on events. As an example, one application for the FDS4780 is the efficient running of a 2.4 kW, three-phase industrial motor, when the requirements for high current, thermal, and ESD performance must be met. In this application, the FDS4780 delivers the highest energy saving performance, due to its low on-resistance and excellent thermal performance.
The FDS4780 has proven to be a reliable, efficient, and power saving device and is widely used in power supply, motor control, and other applications requiring fast switching and excellent thermal performance. Due to its features, it is suitable for all types of applications, providing high performance and reliability. In conclusion, the FDS4780 is a great choice for power supply and motor control applications requiring fast switching, low on-resistance, and high reliability.
The specific data is subject to PDF, and the above content is for reference
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