FDS4080N3 Discrete Semiconductor Products

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The FDS4080N3 is a N-channel enhancement mode vertical D-MOSFET transistor, designed for power management and high frequency switching applications. It is available in an industry standard TO-220 package. This device offers high level of integration and low on-resistance performance for improved efficiency in power management systems.

The FDS4080N3 is manufactured using an advanced trench power MOSFET process that has been optimized for large operating voltage range, low R_DS(ON) and low leakage currents. It is also capable of operating with extremely high frequency rates, making it suitable for high frequency power management systems.

The FDS4080N3 has an extremely low on-state resistance of 7.8 mΩ and can handle load currents up to 60 A. This ensures good power dissipation characteristics, making it a suitable choice for power management applications. The FDS4080N3 also features a very low gate charge of 8.7 nC, allowing for fast switching times. Additionally, this device has excellent thermal performance, making it well suited for thermal management applications.

The FDS4080N3’s working principle is based on the enhancement-mode operation of a MOSFET. In the enhancement mode of operation, the device acts as an open circuit when the gate voltage is at 0 V. When a positive voltage is applied to the gate, the device is switched on and a current flows through. The magnitude of this current is dependent on the value of the drain-to-source voltage and the gate voltage.

The FDS4080N3 is widely used in a number of power management and high frequency switching applications. It has been used in battery-powered systems, automotive electronic systems, consumer electronic products, and various other electrical and electronic applications. This device is particularly suitable for high frequency applications due to its low on-state resistance, low gate charge, and excellent thermal performance.

In conclusion, the FDS4080N3 is a highly integrated N-channel MOSFET transistor designed for power management and high frequency switching applications. This device provides low on-state resistance and high power dissipation in a wide range of applications. Additionally, it has excellent thermal performance which makes it an ideal choice for thermal management applications. The FDS4080N3’s working principle is based on the enhancement-mode operation of a MOSFET. All these features make the FDS4080N3 a versatile and highly capable device, suitable for a broad range of power management and high frequency switching applications.

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