Allicdata Part #: | FDS4559-F085TR-ND |
Manufacturer Part#: |
FDS4559-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 60V 4.5A/3.5A 8-SO |
More Detail: | Mosfet Array N and P-Channel 60V 4.5A, 3.5A 2W Sur... |
DataSheet: | FDS4559-F085 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101, PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A, 3.5A |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The FDS4559-F085 is a type of transistor array, which is a combination of various integrated transistors into an integrated circuit, that can be used in a variety of electronic applications. It is designed for a wide selection of low to high power applications, and have specific advantages and uses in modern circuit designs.
A transistor array is composed of a number of individual transistors arranged within a single package. This type of package is used to reduce the number of connections needed for high voltage, power circuit designs. It also offers better performance, control and protection from electrical interference. This type of package, along with low on-resistance, is what makes the FDS4559-F085 one of the most advanced transistor arrays on the market.
The FDS4559-F085 is made up of power MOSFETs, or metal-oxide-semiconductor field-effect transistors. These transistors are used in a variety of circuits, in which one terminal of the gate can open or close an electrical path between the source and the drain conductor. All MOSFETs have a gate, drain, and source, with each able to carry a certain amount of voltage, current and power. A transistor array built with a metal-oxide-semiconductor FET simplifies the assembly process for all of these types of components, and can provide greater performance with less space.
The FDS4559-F085 is specifically designed for applications that require higher currents and higher voltages. It is ideal for switching power supplies, high-speed logic circuits, and noise-sensitive circuits. It is also versatile enough to be used across multiple application fields, such as automotive, industrial, medical and in communications. The FDS4559-F085 is also suitable for DC-to-DC or AC-to-DC conversion, or to protect and provide buffer against high voltage transients, or switching of high-voltage loads.
The working principle of any transistor, such as the FDS4559-F085, is based upon the fact that when a voltage is applied to the gate, a electric field is created. This electric field then attracts electrons from the source and drain, creating a current path and allowing the flow of current. As the voltage is increased, the electric field increases, causing an increase in current. When the electric field is reduced, the electrons are no longer attracted to the gate and the current flow is stopped.
Due to its low on-resistance, high reliability, and flexible design, the FDS4559-F085 is an ideal choice for a number of applications. It is a powerful transistor array and holds a number of advantages over traditional discrete components. It is suitable for use with a variety of power circuits, is ideal for high-speed switching, and is a reliable and efficient option for many applications. The FDS4559-F085 can be used in automotive, industrial, medical, communications, and other applications, and is a great option for many power-related projects.
The specific data is subject to PDF, and the above content is for reference
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