FDS4070N7 Discrete Semiconductor Products

FDS4070N7 is a low-voltage N-channel enhancement mode MOSFET, which belongs to the latest generation of single-channel Power MOSFETs that feature super-breakdown voltage and low on-resistance.

The FDS4070N7 has a very low on-resistance, allowing low gate drive power loss and high switching frequencies. The FDS4070N7 is especially suitable for enhancing power management, synchronous rectification and other applications in which very low on-resistance and high switching speed are required. This MOSFET can also be used to convert linear voltage regulators into extremely efficient switch-mode regulators.

FDS4070N7 product features include: cost-effectiveness, low on-resistance, balanced on and off-state capacitance for higher speed switching and improved noise margin, and an extended temperature range for enhanced reliability.

The FDS4070N7 is ideal for a variety of applications including power management, synchronous rectification, load switching, voltage amplification and high current switching, as well as lighting, motor control and automation.

Working Principle

FDS4070N7 is operating utilizing enhancement mode technology. This is the same principle of operation of a n-channel depletion type MOSFET and both types may be used interchangeably for digital logic level applications.

In a depletion type MOSFET, applying a positive voltage to the gate terminal increases the number of electron carriers within the channel and the total voltage across the device. This ultimately leads to an increase in current across the drain and source terminals.

In an enhancement type MOSFET, applying a positive voltage to the gate terminal increases or \'enhances\' the conductivity between the drain and source terminals. This leads to an increase in current across the device. An enhancement type MOSFET also requires a higher gate-source voltage to fully turn on than a depletion type MOSFET.

It should be noted that by adding a resistor in series with the gate terminal can help limit the maximum drain current. This will help prevent damage to the device due to excessive current.

Since its release in 2019, the FDS4070N7 has quickly become a popular choice for its robust and efficient design. With its low-resistance, balanced on and off-state capacitance, and extended temperature range, the FDS4070N7 is ideal for a wide range of applications.