Allicdata Part #: | FDS89161LZTR-ND |
Manufacturer Part#: |
FDS89161LZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 100V 2.7A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Sur... |
DataSheet: | FDS89161LZ Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 302pF @ 50V |
Power - Max: | 1.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The FDS89161LZ is a logic-level n-channel enhancement-mode power MOSFET transistor array from Fairchild Semiconductor. This device is a three-terminal array which features an N-channel enhancement mode power MOSFET for each channel, along with an integrated protection diode and a Schottky Diodes. The FDS89161LZ can be used in applications that require fast switching from low level (logic "1") to high level (logic "0").
The FDS89161LZ is designed for low-power, low-noise and low-cost switching applications. It is used in a wide range of applications including Television, Telecommunication, Computer Peripherals, Consumer Electronics, Instrumentation, Automotive and Portables.
The working principle of the FDS89161LZ is based on its N-channel MOSFET which is shown in the figure below. The device consists of an N-channel MOSFET and an integrated protection diode. When the gate of the N-channel MOSFET is driven by a low level (logic "1"), then the device is in its off-state. This effectively turns off the current flow between source and drain. When the gate is driven by a high level (logic "0"), then the N-channel MOSFET is in its on-state and current can flow from drain to source. This switching from low to high level or vice versa is the working principle of the FDS89161LZ.
FDS89161LZ can also be used in low-side and high-side switching applications as well as level shifting applications. they are also used in battery-backed power supply, which requires fast switching between load and battery. In addition, it can be used in motor control applications such as fan control and stepper motor control. It is also used in low-power switch-mode converters to control the switching of the main transistor.
The FDS89161LZ offers many advantages including low on-state resistance for faster switching, lower gate charge for improved efficiency, low thermal resistance for better heat dissipation, and low RDS(ON) for minimum power dissipation. It also features a low threshold voltage which ensures that it can be switched on even at low supply voltage. Furthermore, its integrated Schottky diode improves the conductivity of the junction and enhances the power efficiency.
In addition, it is very easy to use and is abailable in the SOIC-8, PDIP-8, and TSSOP-8 packages. The FDS89161LZ is a cost-effective solution for fast and efficient device switching applications.
The specific data is subject to PDF, and the above content is for reference
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