| Allicdata Part #: | FDS8884TR-ND |
| Manufacturer Part#: |
FDS8884 |
| Price: | $ 0.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 8.5A 8-SOIC |
| More Detail: | N-Channel 30V 8.5A (Ta) 2.5W (Ta) Surface Mount 8-... |
| DataSheet: |  FDS8884 Datasheet/PDF |
| Quantity: | 1637 |
| 1 +: | $ 0.10400 |
| 10 +: | $ 0.10088 |
| 100 +: | $ 0.09880 |
| 1000 +: | $ 0.09672 |
| 10000 +: | $ 0.09360 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 635pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 8.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The FDS8884 is a small signal general-purpose enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). As a type of three-terminal field-effect transistor, the FDS8884 is an integrated circuit device whose primary usage is to amplify or switch electronic signals. Despite their small size and low price, MOSFETs are invaluable in the manufacturing of computer microprocessors, memory chips, and in amplifying and switching circuits used in a variety of applications.The FDS8884 has a saturated current of 6A while operating at 172°C, making it suitable for a variety of analog and switching applications. It is a small form factor device, with the drain and source regions separated by a thin dielectric layer. This makes it temperature insensitive, allowing a wide range of useful operating temperatures. It also has a very low on-resistance of 0.76 ohms, allowing efficient application of power.
The working principle of the FDS8884 is relatively simple. It consists of a gate, which is connected to a voltage source, two drain-source current terminals and a body contact. When a voltage is applied across the gate and the body contact, a gate current is generated, which in turn creates an electrostatic field that attracts electrons in the vicinity of the gate. This creates a small conducting channel between the drain and the source terminals, allowing electric current to flow across it. The field-generated electric field is applied only when the gate is charged, which subsequently controls the current flowing through the conducting channel, allowing the MOSFET to be used as a switch or an amplifier.
The FDS8884 has a variety of applications in various devices. It can be used in audio amplifiers, DC-to-DC converters, battery-operated power supplies and computers, as well as in signal switching, signal mixing, and signal modulation circuits. Additionally, in industrial applications, the MOSFET can be used to switch currents, voltages, and high-power loads, including being part of an overall circuit to control pressure, temperature, and other resistive loads.
Overall, the FDS8884 is an ideal choice for those who need a reasonably powerful MOSFET that is small, low- cost and has a wide range of operating temperatures. Its ability to switch, amplify, and mix signals make it a valuable component in all kinds of consumer and industrial electronics applications, allowing it to be used in almost any device.
The specific data is subject to PDF, and the above content is for reference
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