FDS8962C

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	7A, 5A
Rds On (Max) @ Id, Vgs:	30 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	575pF @ 15V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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FDS8962C Application Field and Working Principle

FDS8962C is an array of monolithic field-effect transistors (FETs) designed for a wide range of switching, power, and voltage-level applications. These systems can control signals up to 6V and can be used as a multiplexer, power switch, and power amplifier in various applications. FDS8962C devices are able to provide high current and make efficient use of energy due to their low threshold voltage, low on-state resistance, and low no-load power dissipation. It has balanced performance outputs, excellent curve symmetric characteristics, and stable reverse biases to ensure maximum performance consistency.

The FDS8962C requires a supply voltage (V_dd) between 3V and 10V. The output of the device is available as a complementary output in the form of a complementary N-channel MOSFET (CN9) and a P-channel MOSFET (CP9). This output can be used to drive a variety of load types, including resistive and inductive loads. The FDS8962C has an internal thermal shutdown (TSD) feature that protects the device from failures in high-temperature applications. The device also has an integrated gate protection diode (GPD) that reduces the possibility of damaging the device under reverse voltages and overvoltage conditions.

The FDS8962C is optimized for both high switching speeds and low power dissipation, enabling the design of high-performance circuits requiring large amounts of switching or power delivery. With its low power dissipation, the device can be used in lower supply voltage applications while using the same amount of energy as it would with a higher supply voltage. This is especially useful in battery-powered applications, where lower power consumption can extend battery life. In addition, the device is tolerant to any additional capacitance on the input signal, providing more flexibility in different circuit designs and operating environments.

The FDS 8902C provides a low input leakage current (I_leak), allowing the circuits to be designed efficiently while using minimal power. The low input leakage current also helps maximize the device’s dynamic range, allowing it to maintain a higher output voltage level than other devices with a similar design. Additionally, the FDS 8902C has reduced capacitance between its drain and source, to help reduce its output resistance (RDS(on)). The resulting higher output drive makes the device suitable for driving higher currents in both inductive and resistive loads.

The FDS8962C comes in two varieties, FP and FN, which offer different performance characteristics. The FP variant offers better performance than the FN variant at lower supply voltages, and its higher peak current ratings make it ideal for high-power applications. The FN variant has an optimized P-channel MOSFET providing higher drive capability, which is better at supplying a high current quickly. On-resistance values and leakage currents of the two varieties differ as well, with the FP variant having a lower RDS(on) and a higher I_leak.

In summary, the FDS8962C is a highly efficient, low power field-effect transistor array device designed for a wide variety of switching and power-level applications. It has several features which make it the right choice for many applications, including low input leakage current, balanced performance outputs, low on-state resistance, low no-load power dissipation, and integrated gate protection diode. It can drive numerous load types, including heavy inductive and resistive loads, and is capable of both high switching speeds and increased power levels. The two varieties – FP and FN – offer different performance options to suit different applications.

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