Allicdata Part #: | FDS8984-F085TR-ND |
Manufacturer Part#: |
FDS8984-F085 |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 7A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7A 1.6W Surfac... |
DataSheet: | FDS8984-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.40278 |
Series: | Automotive, AEC-Q101, PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 635pF @ 15V |
Power - Max: | 1.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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FDS8984-F085 is a type of array field-effect transistor (FET) and is specifically referred to as a dual-symmetric quadlow threshold voltage mosfet array. It was developed by Fairchild Semiconductor, a leader in the semiconductor industry. This type of FET is typically used in power management and display applications. The purpose of this article is to provide an overview of the FDS8984-F085 including its application field, working principle, and characteristics.
Application Field
The FDS8984-F085 is designed for power management applications. It offers high current output, low resistance, and fast switching with minimal losses. This makes it an ideal solution for power conversion, battery charging and discharging, and noise de-stabilization in high-power systems. Additionally, the FDS8984-F085 also provides a wide variety of features which make it suitable for display applications, such as liquid crystal displays (LCDs) and plasma displays.
Working Principle
The FDS8984-F085 works on the principle of a FET transistor. A FET is a type of transistor that consists of four terminals - the source, gate, drain, and body. When a voltage is applied to the gate, it creates an electric field that enables the channel of the FET. This channel allows electrons to flow between the source and the drain and current is regulated by the strength of the electric field. As a result, the FDS8984-F085 effectively acts as a current-to-voltage converter, regulating the current flow between the source and drain.
Characteristics
The FDS8984-F085 offers a variety of features which make it suitable for power management and display applications. It is characterized by a low threshold voltage of 0.6V and a maximum current output of 250mA. It also offers improved temperature performance, with a maximum operating temperature of 150°C and junction-to-case thermal resistance of 1.4°C/W. Additionally, the FDS8984-F085 features a relatively high power dissipation of up to 200mW. Furthermore, it is manufactured using a high-performance TrenchFET process that ensures low leakage and high power output.
In summary, the FDS8984-F085 is an array-type field-effect transistor (FET) which can be used for power management and display applications. It is characterized by a low threshold voltage, high current output, and improved temperature performance. Its high power dissipation and low quantity of electron leakage further enhance its suitability for power management applications. All in all, the FDS8984-F085 is a versatile and reliable device that can be used to achieve reliable power conversion, battery charging, and noise de-stabilization.
The specific data is subject to PDF, and the above content is for reference
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