FDS86540 Allicdata Electronics
Allicdata Part #:

FDS86540TR-ND

Manufacturer Part#:

FDS86540

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N CH 60V 18A 8-SO
More Detail: N-Channel 60V 18A (Ta) 2.5W (Ta), 5W (Tc) Surface ...
DataSheet: FDS86540 datasheetFDS86540 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6410pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDS86540 is a high-voltage (60V) and high-current (4A) P-channel Field Effect Transistor (FET). It is manufactured using a superjunction concept, which integrates two innovative technologies, Super Vertical Interconnection Process (SVIP) and Power Trench technology. This combination offers superior power and low threshold voltage. The FDS86540 is suitable for a wide range of electronics applications, including power supply circuits and motor control.

The working principle of FDS86540 is relatively easy to comprehend. It works on the principle of majority carrier injection. When current flows through the device, an electric field is generated at the gate terminal, which creates an electric field around the gate that is stronger than that of the device. The electric field attracts electrons and holes from the drain and source regions, respectively, into the gate region. The gate-source voltage determines the amount of carriers that are injected into the gate region and this is called gate injection. Depending on the magnitude of gate-source voltage, a source-drain current is developed corresponding to the amount of charge injected.

The FDS86540 is a low-voltage FET, with a drain breakdown voltage rating of 60V, a typical threshold voltage of -2.1V, and a maximum drain current capability of 4A. It is suitable for a wide range of applications, from high-side switches in power supplies to stepper motor drivers and pulse width modulation controllers. It is also well-suited for use in automotive and industrial applications, such as battery management systems, motor control, and load switching.

The FDS86540 is available in the TO-220 package, with both tab and hole mounting options. It is designed to handle operation temperatures ranging from -55°C to 150°C. The device has a low on-state resistance, with a typical value of 0.047 Ohms. It also has superb protection against thermal runaway, with a thermal resistance rating of 3.44°C/ W.

The FDS86540 offers superior performance, reliability, and efficiency in a wide range of power electronics applications. It is a very versatile solution for implementing gate drivers, level shifting, load switching, and other circuit functions. The device is also well-suited for use in power-driven systems, such as DC-DC converters and motor control systems.

The specific data is subject to PDF, and the above content is for reference

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