FDS8978

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The FDS8978 is a type of power MOSFET technology that can be used in a wide range of applications. The FDS8978 is designed for low-side and high-side driving of brushed DC motors. It is also suitable for use in switching power supplies, solenoid drivers and other applications requiring wide input voltage and current ranges. This MOSFET technology utilizes an array of Field-Effect Transistors (FETs) for enhanced performance. The FDS8978 is an array-staged power MOSFET technology with integrated gate and source protection.

A power MOSFET is a type of insulated-gate field-effect transistor (IGFET) that is used as a switch to control the flow of current in a circuit. The device is composed of two separate portions, the body and the gate. The body is composed of a substrate and two silicon junctions. The gate is composed of two layers of insulated gate electrodes. The gate voltage controls the current flowing through the MOSFET, and the voltage at the source determines the amount of current that will flow.

The FDS8978 array is composed of two high-voltage, low-rezonance, interconnects MOSFETs, two high-voltage high-reverberance gate drive, two gate protection transistors, two source protection transistors, one gate protection resistor and one source protection capacitor. This device is designed for operation up to 1MHz. The FDS8978 is designed for high-efficiency operation when driving brushed DC motors. This device utilizes a dynamic current limit (DCL) circuit which provides over-current protection, as well as a feedforward circuit which reduces switching losses.

The FDS8978 utilizes an array of FETs which provides improved performance compared to Single-Chip MOSFET (SCMOS) technology. Each FET provides its own conduction gate and source protection. This allows the FETs to operate at higher temperatures and also reduces the risk of unexpected failure. Additionally, the FDS8978 includes built-in gate protection transistors to protect the device from over current and gate-source voltage transients.

The FDS8978 includes an internal charge pump which provides up to 20V gate drive potential. The FETs can be operated in either an independent or parallel configuration. In independent mode, the FETs are used to control a single level of current. In parallel configuration, the FETs are used to control multiple levels of current. In either case, the array provides improved efficiency and performance compared to single-chip solutions.

The FDS8978 is a power MOSFET array that provides excellent performance when used for driving brushed DC motors. This device utilizes an array of FETs for improved performance and reliability. Additionally, the device includes built-in gate and source protection for added safety. Finally, the device utilizes a charge pump for up to 20V gate drive potential, making it suitable for a wide range of applications.

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