FDS8812NZ Allicdata Electronics

FDS8812NZ Discrete Semiconductor Products

Allicdata Part #:

FDS8812NZTR-ND

Manufacturer Part#:

FDS8812NZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 20A 8-SOIC
More Detail: N-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: FDS8812NZ datasheetFDS8812NZ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6925pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDS8812NZ is a dual-N-channel enhancement-mode MOSFET, specifically designed for high-speed switching applications due to its low on-resistance. It is a small-footprint, low-cost device that is ideal for low-voltage, high-current switch-mode power applications such as telecom systems, power supply, portable appliances, and high-efficiency DC-DC converters. This article will discuss the FDS8812NZ’s application field and working principle.

The FDS8812NZ offers a high-speed switching performance with low gate-source voltage (Vgs) and low input and output capacitance. It operates from -10V to +1200V with low gate charge and minimal power consumption. The device has an on resistance (Rds(on)) of 138nOhm and can handle a continuous drain current of 8A. It offers excellent thermal performance, fast switching speed, and low drain-source capacitance. It can also withstand a maximum drain-source voltage of up to +1800V.

The FDS8812NZ has been designed to work in an environment that is both harsh and reliable. It has an operating temperature range of -55°C to +175°C and can operate up to a maximum voltage of +1200V. It is also designed for low-power applications and is compliant with RoHS and Halogen-Free environmental regulations. In addition, its low profile and small size makes it ideal for SMT (Surface Mounted Technology) applications.

The FDS8812NZ is a commonly used enhancement-mode MOSFET, meaning it requires an input signal to trigger a gate-source voltage in order to switch the higher power output. When the voltage is applied, a high concentration of electrons will flow from the source terminal to the drain terminal. This current flow from source to drain is called the drain current (Ids). The amount of current that is allowed to flow is determined by the voltage applied to the gate (Vgs). As the Vgs is increased, more electrons flow between the source and the drain, increasing the drain current (Ids). When the voltage is decreased, the electrons do not flow freely, reducing the amount of current that can flow.

The FDS8812NZ is often used in low power and high current applications due to its low on resistance and small size. It is also used to provide efficient and reliable switching of audio, video, and power signals in telecom, automotive, and medical applications. It can also be used in motor speed controllers, solar energy controllers, and industrial automation systems.

The FDS8812NZ is a useful device for high-speed switching applications due to its low on-resistance and fast switching speed. Its low gate-source voltage, small size, and low-power consumption combine to make it ideal for SMT applications where size and power are a concern. The device combines high performance, low power consumption, and reliability to make it suitable for use in a variety of different telecom and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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