Allicdata Part #: | FDS8638TR-ND |
Manufacturer Part#: |
FDS8638 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 18A 8-SOIC |
More Detail: | N-Channel 40V 18A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | FDS8638 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5680pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS8638 is a single P-channel and depletion-mode MOSFET, which has been optimized for low gate-charge and gate resistance. This makes it suitable for applications in high speed switching for power management, which requires fast switching times and efficient thermal management. This MOSFET can also be used for low-side switch applications, such as in motor control and power distribution systems.
The FDS8638 also has a low profile package, making it suitable for applications where space is at a premium. It has a low thermal resistance junction-to-ambient, and is therefore able to dissipate heat more efficiently than other MOSFETs in this package size.
The FDS8638 has a small gate-drain capacitance, meaning that it can switch at faster speeds and with higher efficiency than other MOSFETs in this package size. This makes it ideal for high-speed switching applications, such as in communications systems and in power management systems.
The FDS8638 uses an insulated-gate construction, in which the gate electrode is isolated from the body of the device. This makes it resistant to voltage-spikes and ESD (electrostatic discharge) damage. The FDS8638 also features a Kelvin source connection, which helps to reduce the voltage drop associated with switching on the device.
The working principle of the FDS8638 is to control the current flow between the drain and the source by applying an electric field to the gate. The gate region is created by having a conductive oxide layer between the gate-drain junction and the gate electrode. The gate electrode can be either P type (positive) or N type (negative).
When a positive voltage is applied to the gate (with respect to the source), the electrons are drawn away from the gate and accumulate at the source. This creates a stronger electric field at the gate–drain junction than at the source, thereby increasing the conduction between the drain and the source, and allowing current to flow. In the reverse case, if a negative voltage is applied, the electrons are attracted to the gate and thereby reduce the electric field at the gate–drain junction, and reduce the conduction between the drain and the source, thereby blocking current flow.
In this way, the FDS8638 can be used for applications such as switching, current regulation, and power management in motor control and communications systems. It can also be used in low-side switch applications, such as in power distribution systems.
The specific data is subject to PDF, and the above content is for reference
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