FDS8813NZ

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4145pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	76nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	18.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to FDS8813NZ

The N-channel enhancement-mode FDS8813NZ is an advanced power MOSFET. Specifically designed for power management applications, it offers the high level of performance needed in applications such as power supplies, motor controls, and hybrid power systems.This high performance device is designed to provide the component maker with high efficiencies and cost savings. It has multiple application fields including industrial, automotive, and computing applications. It can also be used in applications such as energy storage and power conditioning.The FDS8813NZ is a versatile MOSFET that can be used for both switch mode and linear applications. It can also provide high signal switching capabilities for motor control and other high frequency switching applications.

Applications of FDS8813NZ

FDS8813NZ MOSFETs are widely used in power management applications, including:

• Switch mode power supplies
• DC-DC converters
• DC motor controls
• AC to DC converters
• Power conditioning for energy storage
• High frequency switching applications
• Hybrid power systems
• Data processing and computer systems
• Data communication systems
• High power industrial motor controls

The FDS8813NZ features a robust design to support high voltage and current demands. It has a high rated current rating, low on-state resistance, and superior quality assurance. The device also features low thermal resistance and fast switching times.

Working Principle of FDS8813NZ

FDS8813NZ MOSFETs are an enhancement-mode FET, which means they are designed to pass current when a voltage is applied to the gate. The device is designed with a drain-source voltage module, which helps maintain current flowing through the device, even when the gate voltage is low.The FDS8813NZ design also helps reduce power losses by utilizing low on-state resistance. This device is an extremly efficient, allowing for increased power output and improved system efficiencies. Furthermore, this device can handle high voltages and current demands, due to its robust design. The FDS8813NZ offers improved reliability, compared to other power MOSFETs. With its improved thermal conductivity and fast switching times, the device is able to deliver reliable power switching.

Conclusion

The FDS8813NZ Power MOSFET is an advanced device with multiple application fields. It is an enhancement-mode FET, featuring a robust design to handle high voltages and current demands. This device also has low on-state resistance and fast switching times, providing increased power output, improved system efficiencies, and improved reliability.

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