FDS8333C

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FDS8333C is an enhancement mode N-channel logic level field-effect transistor array developed by Fairchild Semiconductor. It consists of two independent intricate N-channel MOSFETs which are separated by a low on-resistance silicon dioxide layer, each with its own source, gate and drain.The main application field of FDS8333C is in the industrial level for compact high current load switch which is often used in the DC-DC converters or low frequency inverters. It can also be used to switch the power between the consumers and the source, the drain source on-resistance of this transistor is quite low, contributing to very low power losses.The operating principle of this component is very simple yet efficient. In the normally-off operation, the electric field over the low on-resistance silicon dioxide layer compresses the MOSFETs and switches them off. While in the activity mode, the electric field changes and leaves the MOSFETs in the linear region where they conduct current.Moreover, FDS8333C enables designers to benefit from its versatile features that allow them to easily tailor the operation of their solution, depending on the application field. The on-resistance, the gate threshold voltage and the threshold voltage temperature coefficient can all be adjusted to meet the requirements of the application.To summarise, FDS8333C is an innovative component developed by Fairchild Semiconductor, offering a unique combination of features for high current load switches. This component is particularly useful in the industrial level for DC-DC converters and low frequency inverters. Designers can take advantage of its adjustable characteristics, ensuring tailored operation for application specific requirements.

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