Allicdata Part #: | FDS8690TR-ND |
Manufacturer Part#: |
FDS8690 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 14A 8-SOIC |
More Detail: | N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | FDS8690 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.6 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDS8690 Application Field and Working Principle
The FDS8690 is a type of MOSFET, or metal-oxide-semiconductor field-effect transistor, that is part of the FOMA family. It is used as a high-power FET in both digital and analog circuits, and is widely used for power switching applications. It is an ideal choice for applications that require high level switching accuracy and low power losses, such as DC/DC converters and motor control.
The FDS8690 MOSFET is available in a variety of packages, including the TO-220, TO-252, SOP-8, SOP-16, TSSOP-8, and TSSOP-16. Each package is designed to accommodate different size PCBs and/or electrical requirements. A major advantage of the FDS8690 is that it can be configured as either an N-channel or P-channel device, depending on the application.
In terms of its electrical characteristics, the FDS8690 features an RDS(on) of 55mOhm, an ID of 33A, a VGS of 0 to -3V, and a VDS of 4 to -5V. Other characteristics include a Vgs of 4.5 to -7V, a drain-source breakdown voltage (BVDSS) of up to 800V, and a maximum drain current (IDM) of 62A. Its maximum operating temperature (Tcase) is 175°C.
The FDS8690 works on the same principles as most other MOSFETs, including the P-channel and N-channel types. It uses the gate-source voltage (VGS) to control the amount of current flowing through the channel between the drain and the source. When the voltage applied to the gate is higher than the threshold voltage (Vth), the MOSFET is "on" and allows current to flow through the channel. When the voltage applied to the gate is lower than the threshold voltage, the MOSFET is "off" and blocks current flow through the channel.
The FDS8690 is capable of switching a large amount of power while maintaining low power losses, making it an ideal solution for power switching applications in both analog and digital circuits. It is also highly reliable, capable of performing in temperatures up to 175°C, and features over-current and over-temperature protection. In addition, its wide variety of package options can accommodate different PCB sizes, making it a versatile choice for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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