Allicdata Part #: | FDS8984_F123-ND |
Manufacturer Part#: |
FDS8984_F123 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 8-SOIC |
More Detail: | Mosfet Array |
DataSheet: | FDS8984_F123 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The FDS8984_F123 is a multi-channel device used in active filters and multiplexers. It consists of five field effect transistors (FETs) in an integrated array. This device is capable of providing a wide range of signal amplification and output current control with very low power consumption.
Principally, the FDS8984_F123 utilizes MOSFETs (metal oxide semiconductor field effect transistors). This type of transistor is a voltage-controlled device which combines a low input impedance with a high switching speed. Its low power consumption and flexibility in total gate capacitance make it ideal for analog and digital circuit designs.
The FDS8984_F123 is a highly versatile device for applications in power supplies and amplifiers. Its five channels can be configured for use in linear and switching converters, adjustable current sources, and as a source-channel multiplexer. The ability to select various gate-source configurations also makes it suitable for powering semiconductor devices such as triacs and thyristors.
The FDS8984_F123’s internal circuit design includes an input pre-amplifier stage and a bridge-type drive circuitry. The output stage amplifier provides either high or low-side switching capability with an efficient driver supply voltage. Its maximum current ratings range from 30mA to 100mA, while its input impedance ranges from 10kOhms to 25kOhms. With its miniature package, this device is also well-suited for applications with limited space requirements.
The FDS8984_F123 includes many advanced features that make it an ideal fit for many applications. It is capable of operating in temperatures up to 85°C and features a robust design that can accommodate a wide range of signal frequencies up to 32MHz. Additionally, it is equipped with a low input current feature, a thermal shutdown protection, and advanced ESD (electro-static discharge) protection.
In conclusion, the FDS8984_F123 is a highly versatile array of five field effect transistors, which utilizes metal oxide semiconductor field effect transistors to provide an efficient solution to many types of power, current and signal amplification needs. Its small size and low power consumption make it attractive, while its wide voltage and current ratings, combined with a variety of features make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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