FDS8858CZ

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	8.6A, 7.3A
Rds On (Max) @ Id, Vgs:	17 mOhm @ 8.6A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1205pF @ 15V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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Introduction

The FDS8858CZ is a device that can be used for applications involving signal amplification, switching and level shifting. It is a monolithic dual P-channel MOSFET array, which has the capability of flowing up to 4.4 A, and exhibits a typical threshold voltage of 0.8V and a maximum RDS(ON) of 0.0014 Ω. This device is manufactured on a double-polysilicon process and is available in the SO-8 package.

Applications

The FDS8858CZ is a versatile device that can fulfill different roles in a wide range of applications. It can be used as a low-side switch in motor control, low-side power switch, low-side pre-drive, and local power and voltage control. Motor control applications include controlling speed, direction, starting, stopping, and speed regulation of small motors, while in low-side pre-drive applications, it can be used to drive loads such as LEDs, DC-DC converters, relays and solenoids. In addition, the device can also be used for local power and voltage control in battery-powered applications.The driving capability of the FDS8858CZ is further amplified with its 10V sink rating, which allows for improved switching efficiency, and the integrated Schottky diode improves reverse energy removal during switching to guarantee safety in high-current applications.

Device Working Principles

The FDS8858CZ is an array of two integrated P-channel MOSFETs, which both have a 10V single-ended gate drive and sink rating. They have an on-resistance at 4.4A, and a threshold voltage of 0.8V. The integrated Schottky diode, which is connected between drain and source, prevents inductive spikes, which could cause permanent damage to the device. It also provides protection from excess power dissipation in the event of an overload.When using the device in motor applications, the current controlled by the FDS8858CZ is proportional to the voltage applied to the gate. This voltage represents the amount of charge stored in the gate-source capacitance, so when the gate-source voltage reaches the threshold voltage (VGS(Th)), the device will start to conduct current, thus controlling the current flow.For voltage-controlled applications, the device is used by connecting two resistors from the source and drain, and establishing a voltage drop. The voltage drop across the source-drain path can be adjusted by changing the resistance of the resistor set. As a result, the current flow can be altered linearly with voltage.

Conclusion

The FDS8858CZ is a versatile dual P-channel MOSFET array with several applications. It has a 10V single-ended gate drive and sink rating, an on-resistance of 4.4 A and a typical threshold voltage of 0.8V. The integrated Schottky diode helps to protect the device from inductive spikes and excessive power dissipation. The device can be used for signal amplification, switching, or level shifting, or it can be used in motor control applications, low-side pre-drives and local power and voltage control.

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