FDS8896 Allicdata Electronics
Allicdata Part #:

FDS8896TR-ND

Manufacturer Part#:

FDS8896

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 15A 8SOIC
More Detail: N-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: FDS8896 datasheetFDS8896 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDS8896 is a type of FET (Field Effect Transistor) that is used for amplification and signal switching. The general purpose FDS8896 FET is a three terminals device, consisting of a drain, gate, and source. It is of special protected design thus suitable for use as a series pass element in voltage regulators and as an on-off switch in various applications.


There are many different versions of FDS8896 depending on their maximum ratings, substrate technology and packaging.

The FDS8896 is a general-purpose N- Channel enhancement-mode field-effect transistor (FET) designed for applications that require high dV/dt and low RDS(ON). It is suitable for source driving in various analog control circuits, inverters and also power amplification in various power supply circuits.


Working Principles of the FDS8896

The basic working principles of the FDS8896 FET are that electric fields can be used to control electric currents in an isolated channel. The electric field creates a region called the \'depletion region\' in the semiconductor between the source region and the drain region. A voltage applied between the gate and source creates an electric field between those two points which then widens the depletion region between the source and drain resulting in a decrease in current flow between them.

Essentially, the FDS8896 FET works by controlling the “on” and “off” state of the transistor, which then controls the flow of current. When the gate voltage is increased it narrows the depletion region and causes the transistor to turn “on”, and when it is reduced it encourages current flow and the transistor turns “off”.


Applications of the FDS8896

The FDS8896 is one of the most commonly used transistors due to its wide range of applications. It is used in high side and low side power switches, analog control circuits, inverters and power supply circuits. The uses of FDS8896 FETs also include voltage regulators, audio amplifiers, and crossed power stages. This transistor has excellent high dV/dt ratings, low gate drive requirements, and low ON resistance which are suitable characteristics for various uses. It is also useful in various applications due to its noise characteristics and high current capability.

The FDS8896 is also used in various audio power amplifiers and voltage regulators. This device requires low gate drive requirements, is capable of operating at high frequencies, has low gate-source capacitance and low drain-source capacitance thus making it ideal for multiple audio applications. The FDS8896 is also used as a voltage regulator in power circuits. It is important in achieving more efficient regulation and higher output densities in power electronic applications.


Advantages of the FDS8896 FET

One of the main advantages of the FDS8896 FET is that it has high attainable current ratings and low on-resistance. The FDS8896 has excellent thermal and temperature characteristics. It can handle high power dissipation and high operating temperatures, which makes it suitable for various long time applications. The FDS8896 is also tolerant to high voltage ratings, giving designers the flexibility to work with a variety of range requirements.

The FDS8896 FET also has very low gate-source capacitance and low drain-source capacitance making it ideal for operation at high frequencies. It also has low gate drive requirements which makes it easy to control, and can be used with various control circuits. It is also a low-cost solution for high-speed switching applications.


Conclusion

The FDS8896 is a field-effect transistor (FET) that is used for amplification, signal switching and power amplification. This FET is commonly used in a wide range of applications due to its low cost, high current ratings, low on-resistance and low gate drive requirements. The FDS8896 FET also has excellent thermal, temperature and voltage characteristics, which make them suitable for long time applications. Its low capacitance makes it ideal for high frequency operation and switching applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDS8" Included word is 40
Part Number Manufacturer Price Quantity Description
FDS8670 ON Semicondu... -- 1000 MOSFET N-CH 30V 21A 8-SOI...
FDS8874 ON Semicondu... -- 1000 MOSFET N-CH 30V 16A 8-SOI...
FDS86252 ON Semicondu... -- 1000 MOSFET N-CH 150V 4.5A 8SO...
FDS8812NZ ON Semicondu... -- 1000 MOSFET N-CH 30V 20A 8-SOI...
FDS8870_G ON Semicondu... 0.0 $ 1000 INTEGRATED CIRCUITN-Chann...
FDS86242 ON Semicondu... -- 1000 MOSFET N-CH 150V 4.1A 8-S...
FDS8638 ON Semicondu... -- 2500 MOSFET N-CH 40V 18A 8-SOI...
FDS8947A ON Semicondu... -- 1000 MOSFET 2P-CH 30V 4A 8SOIC...
FDS8934A ON Semicondu... -- 1000 MOSFET 2P-CH 20V 4A 8SOIC...
FDS8958 ON Semicondu... -- 1000 MOSFET N/P-CH 30V 7A/5A 8...
FDS8333C ON Semicondu... -- 1000 MOSFET N/P-CH 30V 8SOICMo...
FDS8926A ON Semicondu... -- 1000 MOSFET 2N-CH 30V 5.5A 8-S...
FDS8962C ON Semicondu... -- 1000 MOSFET N/P-CH 30V 7A/5A 8...
FDS86141 ON Semicondu... -- 2500 MOSFET N-CH 100V 7A 8-SOI...
FDS86140 ON Semicondu... -- 1000 MOSFET N-CH 100V 11.2A 8S...
FDS86240 ON Semicondu... -- 1000 MOSFET N-CH 150V 7.5A 8-S...
FDS8958B_G ON Semicondu... 0.0 $ 1000 MOSFET N/P-CH 30V 6.4A/4....
FDS8984_F123 ON Semicondu... 0.0 $ 1000 MOSFET 2N-CH 30V 8-SOICMo...
FDS8870 ON Semicondu... -- 1000 MOSFET N-CH 30V 18A 8SOIC...
FDS86540 ON Semicondu... -- 1000 MOSFET N CH 60V 18A 8-SON...
FDS8842NZ ON Semicondu... -- 2500 MOSFET N-CH 40V 14.9A 8SO...
FDS8880 ON Semicondu... -- 1000 MOSFET N-CH 30V 11.6A 8SO...
FDS8882 ON Semicondu... -- 1000 MOSFET N-CH 30V 9A 8-SOIC...
FDS8896 ON Semicondu... -- 1000 MOSFET N-CH 30V 15A 8SOIC...
FDS8876 ON Semicondu... -- 1000 MOSFET N-CH 30V 12.5A 8SO...
FDS8817NZ ON Semicondu... -- 1000 MOSFET N-CH 30V 15A 8-SOI...
FDS8449-F085P ON Semicondu... 0.0 $ 1000 NMOS SO8 40V 29 MOHMN-Cha...
FDS8690 ON Semicondu... -- 2500 MOSFET N-CH 30V 14A 8-SOI...
FDS8449-F085 ON Semicondu... 0.32 $ 1000 MOSFET N-CH 40V 7.6A 8-SO...
FDS8984-F085 ON Semicondu... 0.44 $ 1000 MOSFET 2N-CH 30V 7A 8-SOI...
FDS8949 ON Semicondu... -- 15000 MOSFET 2N-CH 40V 6A 8-SOI...
FDS8858CZ ON Semicondu... -- 30000 MOSFET N/P-CH 30V 8.6A/7....
FDS89161LZ ON Semicondu... -- 1000 MOSFET 2N-CH 100V 2.7A 8S...
FDS8984 ON Semicondu... -- 2500 MOSFET 2N-CH 30V 7A 8-SOI...
FDS86106 ON Semicondu... -- 10000 MOSFET N-CH 100V 3.4A 8-S...
FDS8447 ON Semicondu... -- 7500 MOSFET N-CH 40V 12.8A 8-S...
FDS8978 ON Semicondu... -- 7500 MOSFET 2N-CH 30V 7.5A 8SO...
FDS8958B ON Semicondu... -- 22500 MOSFET N/P-CH 30V 8SOICMo...
FDS86267P ON Semicondu... 0.48 $ 2500 MOSFET P-CH 150VP-Channel...
FDS8813NZ ON Semicondu... -- 12500 MOSFET N-CH 30V 18.5A 8-S...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics