FDS8949-F085 Allicdata Electronics
Allicdata Part #:

FDS8949-F085TR-ND

Manufacturer Part#:

FDS8949-F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 40V 6A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface ...
DataSheet: FDS8949-F085 datasheetFDS8949-F085 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101, PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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FDS8949-F085 transistors are a type of power electronic array consisting of multiple semiconductors or transistors connected in series. They can be used in applications such as grid-connected inverters and multilevel power converters. The FDS8949-F085 is a single-die, low-voltage, polysilicon structure that boasts superior performance while also providing low on-resistance and operating temperature range.

The FDS8949-F085 power electronic array transistors are designed to operate in a broad range of operating voltages between 55V and 150V. It offers current ratings of up to 50A and a very high power switching frequency. They offer superior on-resistance, excellent thermal performance, and wide common mode range for high-efficiency power applications.

The FDS8949-F085 can be used in a variety of applications including DC/DC converters, motor driver applications, motor control, power supplies, and power conversion. It is capable of performing high-efficiency and high-frequency switching and can withstand both high-side and low-side gate voltages. It is also capable of switching high loads and can even handle short-circuit conditions.

The FDS8949-F085 is based on an insulated gate bipolar transistor (IGBT) with a polysilicon gate material. The gate voltage and device power rating determine the device breakdown voltage, which is the maximum voltage to which the device can be exposed without damage. Gate charges represent the amount of electric charge that must be supplied to open the gate of the device.

The FDS8949-F085 differentiates itself from regular IGBTs in that it is designed with a thicker gate oxide layer, which allows it to withstand higher voltages with lower switching losses. This feature makes it suitable for applications such as high-power motor controllers, PFC controllers, and UPS systems.

The primary working principle of the FDS8949-F085 is based on the bipolar junction transistor (BJT) and its ability to switch between two states. When a small current is passed to the base of the BJT, it will amplify the signal and either turn on or off the switch. The switch is capable of providing a variable output voltage and current level, depending on the input signals applied at the base.

The FDS8949-F085 offers a number of benefits, including fast switching at higher frequencies, thermal stability, wide operating temperature range, and low threshold voltage. Its superior on-resistance and multiple operating voltage ranges make it a suitable choice for applications in the automotive, industrial, and domestic sectors.

The FDS8949-F085 is a highly efficient and reliable power electronic array transistor with a wide range of applications. It can be used in a variety of high-power applications where reliability, efficiency, and temperature range are key concerns. This makes it a suitable choice for power conversion systems, motor driver applications, and motor control.

The specific data is subject to PDF, and the above content is for reference

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