
Allicdata Part #: | FDS8878TR-ND |
Manufacturer Part#: |
FDS8878 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 10.2A 8SOIC |
More Detail: | N-Channel 30V 10.2A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | ![]() |
Quantity: | 7500 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 897pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS8878 is a single P-Channel Power MOSFET (metal-oxide semiconductor field-effect transistor) designed specifically for low-voltage applications. Its robust architecture ensures superior power handling capability and extremely low on-state resistance. The FDS8878 is primarily used in power switching and power conversion applications, but its versatile design and wide operating temperature range make it suitable for a variety of applications.
The FDS8878 consists of four main components: a gate, a drain, a source, and a body (including a drain gate oxide and a gate drain oxide). The gate is the control element, providing a voltage between the gate and source to control the current flowing through the device. The source is the output pin and the drain is the output pin’s counterpart. The body is the physical support for the device, providing a path for electrons to flow between the source and drain. As a result of the high voltage applied to the drain gate oxide, a thin layer of the silicon and other substances will form across the gate-drain interface.
The operating principle of the FDS8878 is fairly straightforward. When a voltage is applied to the gate-to-source, a depletion layer is formed at the gate-drain interface, which significantly reduces the current flowing through the device and reduces the on-state resistance of the device. As a result, the voltage across the load will be very low and hence low on-state losses can be achieved. The on-state resistance will remain low even as the device is turned off. This is because even though the voltage applied to the gate-to-source is decreased, the depletion layer formed at the gate-drain interface does not change, so the resistance is still very low.
The FDS8878 is suitable for a variety of applications, such as: high-frequency switching regulators, protected high-current switching devices, low-voltage DC-DC converters, protected DC power supplies, load switches and so on. It is especially suitable to use in low-voltage supplies such as those found in handheld electronics and portable power tools. The FDS8878 provides excellent power handling capability, making it ideal for use in battery powered applications, such as in lithium-ion batteries.
The key advantages of using the FDS8878 include its low on-state resistance, high-frequency switching capability, wide operating temperature range and its robust architecture. These features make the FDS8878 a reliable and efficient choice for power switching and power conversion applications. Additionally, the FDS8878 is available in a compact SMD package, which makes it ideal for use in space-constrained applications.
In conclusion, the FDS8878 is an excellent choice for low-voltage applications where performance, reliability and efficiency are required. Its wide operating temperature range, robust architecture and high power handling capability make it well suited for a variety of applications. Additionally, its compact SMD package makes it ideal for use in space-constrained applications.
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