Allicdata Part #: | FDS8935TR-ND |
Manufacturer Part#: |
FDS8935 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 80V 2.1A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 80V 2.1A 1.6W Surf... |
DataSheet: | FDS8935 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A |
Rds On (Max) @ Id, Vgs: | 183 mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 879pF @ 40V |
Power - Max: | 1.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDS8935 is an array of advanced power MOSFETs that combines advanced process design and R&D to ensure low on-resistance and excellent thermal stability. This device includes one N-channel MOSFET, which is optimized for power switching applications. It features a very low RDS(ON) value, low gate charge, and a significantly lower noise and temperature coefficient. With its fast switching time, excellent thermal stability and low gate-to-drain capacitance, FDS8935 is an ideal choice for power management applications.
The main application of FDS8935 is in power control circuits, such as DC-DC converters and Power Factor Correction (PFC) applications. In addition, it can also be used in automotive electronics and lighting applications. Furthermore, FDS8935 is also well suited for applications like power switches, high-frequency switching, and high-power switching applications.
FDS8935 uses a N-channel MOSFET structure in which a source, drain and gate are connected to an insulated gate structure. The device contains a gate oxide layer, which makes the drain-source voltage controlled. The gate voltage controls the current flowing through the device. When the gate oxide layer is exposed and gate voltage is applied, electrons are attracted to the oxide interface resulting in additional inversion current as electrons tunnel through the oxide layer, resulting in a low on resistance value.
FDS8935 also performs extremely well in noise suppression applications. The Gate-Drain capacitance makes sure that the rising and falling edges of the switching signals are properly filtered. With its internal gate resistance, FDS8935 also helps reduce switching noise whenever the FET switches on and off.
FDS8935 features low on resistance values, resulting in minimal power dissipation, reduced heat, and improved efficiency for the power circuit. The low on-state resistance leads to reduced power losses when the device is in use. Low gate charge reduces switching losses. Low vibration noise and low temperature drift also lead to an improved overall performance.
In conclusion, FDS8935 is an array of advanced power MOSFETs that offers excellent performance in power control circuits, automotive electronics, high-frequency switching, and high-power switching applications. Its features include low on resistance, low gate charge, high frequency and noise filtering, and low temperature drift. FDS8935 is an ideal solution for power management applications.
The specific data is subject to PDF, and the above content is for reference
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