FDS8958A-F085

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDS8958A-F085 is a dual n-channel enhancing silicon-gate FET array with a low on-state resistance (RDSon) and a high power dissipation rate. This FET array is designed for high-speed switching applications in both synchronous and non-synchronous switching systems. It is available in both SMD and DIP packages to meet various application requirements.

The FDS8958A-F085 has very low on resistance which helps reduce power consumption when operating in a high-speed switching system. This device has a high-power dissipation rate enabling it to operate reliably in applications with high switching frequency. It also has an operating temperature range of -55 to +150 C which makes it ideal for use in high temperature operating environments.

This FET array is designed for high-speed, low-power DC-DC converters, power management and motor control applications. It is especially suitable for high switching frequency, high current and high voltage applications. The FDS8958A-F085 also offers low gate charge, fast switching time and enhanced ESD immunity making it ideal for use in high-end electronic systems.

This FET array works on the principle of gate control. This gate is made up of two n-channel Field Effect Transistors (FETs) connected in series. When a gate control signal is applied, a controlled current can flow between the source and the drain. This current flow is regulated by the gate voltage, controlling the on-state resistance (RDSon).

The FDS8958A-F085 has a very low on-state resistance, allowing the transfer of high-power current while operating at a low power consumption rate. The high-power dissipation rate enables the device to operate reliably and efficiently even when it is subjected to high switching frequencies. This FET array provides enhanced ESD immunity making it ideal for use in high-end electronic systems.

The FDS8958A-F085 also offers excellent sensitivity so that currents can be accurately controlled even at very low gate voltages. This makes it an ideal choice for applications where low power consumption, low heat dissipation and very high reliability are required. In addition, this device provides fast switching time, ensuring that current flow can be accurately regulated during transient pulses.

In conclusion, the FDS8958A-F085 is an ideal device for high-speed, low-power DC-DC converters, power management and motor control applications. It has a very low on-state resistance, high-power dissipation rate, enhanced ESD immunity, improved sensitivity and fast switching time. All these features enable this device to meet the requirements of many challenging applications.

The specific data is subject to PDF, and the above content is for reference