FQPF7N40 Allicdata Electronics
Allicdata Part #:

FQPF7N40-ND

Manufacturer Part#:

FQPF7N40

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 400V 4.6A TO-220F
More Detail: N-Channel 400V 4.6A (Tc) 42W (Tc) Through Hole TO-...
DataSheet: FQPF7N40 datasheetFQPF7N40 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQPF7N40 is a type of Field Effect Transistor (FET) manufactured by ON Semiconductor. It is a n-channel enhancement mode MOSFET and is normally used in a high-side switch or a level-shifter configuration. It is primarily used for controlling voltage in a circuit and thus is used in switch mode power supplies, DC-DC converters, load switches and motor control applications.

The FQPF7N40 is a low-power N-channel enhancement mode MOSFET and comes with a breakdown voltage of 100 volts, an on-state resistance of 0.7 ohms and a maximum Pulsed Drain Current of 17 amperes. It additionally comes with an integrated gate drive circuit that is capable of self-driving outputs of up to 35 volts. It also features a fast switching speed of under 20 nanoseconds.

The working principle of the FQPF7N40 MOSFET is based on the principle of capacitive division. It works by creating a depletion region between the drain and the source, which is connected to the gate terminal. The gate voltage is essentially a fraction of the drain voltage. When the gate voltage is equal to the threshold voltage, the MOSFET is turned on and a current flows from the drain to the source. When the gate voltage is less than the threshold voltage, the MOSFET is turned off and no current flows from the drain to the source.

The FQPF7N40 MOSFET is most commonly used in switch mode power supplies, DC-DC converters and load switches. It can also be used in motor control applications, where it allows for speedy switching between two different voltage levels. Additionally, the integrated gate drive circuit allows it to be connected directly to digital control systems such as microprocessors or microcontrollers, making it extremely easy to integrate into modern electronics.

In conclusion, the FQPF7N40 MOSFET is a versatile device that can be used in a variety of applications. It is an n-channel enhancement mode MOSFET that comes with an excellent breakdown voltage and low on-state resistance. Its fast switching speed, coupled with the integrated gate drive circuit, allows it to be used in a wide range of applications, such as switch mode power supplies, DC-DC converters, load switches and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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