Allicdata Part #: | FQPF4N90C-ND |
Manufacturer Part#: |
FQPF4N90C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 4A TO-220F |
More Detail: | N-Channel 900V 4A (Tc) 47W (Tc) Through Hole TO-22... |
DataSheet: | FQPF4N90C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQPF4N90C is a property of a single N-channel field effect transistors (FETs). It is constructed with a monolithic double-diffused MOS (DMOS) structure and is ideal for a variety of applications such as inverter and amplifier circuits. The FQPF4N90C has some advantages over other FETs, including low drain-source on-state resistance (RDS(on)), low input capacitance, and high DC current gain.
An FQPF4N90C FET is typically used in an N-channel MOSFET switch that controls the switching of loads. It is a voltage-controlled device, which means that the flow of current across the FET is controlled by a gate voltage. It also has excellent switching characteristics and is highly capable of handling large voltages and current flows.
The FQPF4N90C has two terminals, the drain and the source. The drain is connected to the power supply, while the source is connected to the load. A voltage is applied to the gate to turn the FET on and off. When the gate voltage is at a low level, the FET is off; when the gate voltage is at a high level, the FET is on. When the FET is on, a current can flow through the FET from the drain to the source.
The FQPF4N90C can be used in a variety of applications, including power converter applications and motor driver applications. In power converters, the FET is used as a switching element and can handle high levels of current without overheating or burning out. In motor driver applications, the FET can be used to provide a high current drive for motor control and allows for precise speed control. In addition, the FET can be used in voltage regulated power supplies, such as switching regulator and boost converters.
The FQPF4N90C’s working principle involves the use of an electric field to control the flow of current. As the voltage applied to the gate changes, the electric field changes and this change affects the resistance of the FET. The electric field causes the electrons in the N-Channel to become more or less mobile, which changes the resistance of the FET from low (off) to high (on). This allows for precise and efficient control of current flow.
The FQPF4N90C is versatile and has been used in a variety of applications. It has low on-state resistance and high efficiency and is ideal for high voltage and high current applications. It is also a reliable choice for use in motor control and power converter applications.
The specific data is subject to PDF, and the above content is for reference
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