FQPF3N90_NL Allicdata Electronics
Allicdata Part #:

FQPF3N90_NL-ND

Manufacturer Part#:

FQPF3N90_NL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 900V 2.1A TO-220F
More Detail: N-Channel 900V 2.1A (Tc) 43W (Tc) Through Hole TO-...
DataSheet: FQPF3N90_NL datasheetFQPF3N90_NL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.05A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQPF3N90_NL is a high performance D-type power Mosfet with a two-channel logic level N-type MOSFET. This power Mosfet is best suited for low voltage, high current applications such as photovoltaic cell or solar panel applications or linear regulator applications. The FQPF3N90_NL is designed to provide high performance, low on-resistance characteristics and low gate-threshold voltages. It also offers superior switching characteristics and can achieve up to 80A continuous drain current.

The main application field of the FQPF3N90_NL is the solar power market. It is used in various solar energy related applications, such as photovoltaic (PV) cells and panels, linear regulators, solar lighting, and solar electric vehicles. Due to its low on-resistance and fast switching speed, it is also well suited for high-power motor drives, pulse width modulators, and switching power supplies. Additionally, it is commonly used in consumer and industrial applications like computers, consumer electronic devices, amplifiers, and electric transistors.

The working principle of the FQPF3N90_NL is relatively simple. The main component of the FQPF3N90_NL is a power MOSFET, which is basically a switch that can turn current on and off. The gate is the control terminal of the power MOSFET, and the drain and source are the output terminals. When a voltage is applied to the gate from a controller, the gate opens and charges move from the source to the drain, thus turning the device on. When the gate voltage is removed, the device turns off and all current flow stops.

The FQPF3N90_NL has exceptionally low on-resistance along with very low gate-threshold voltages. This design makes it very efficient in terms of power losses and makes it ideal for low voltage applications such as those related to solar and other renewable energy sources. Additionally, its fast switching speed makes it able to handle high frequency applications without any significant losses.

The FQPF3N90_NL is a very useful and versatile power Mosfet. Its low on-resistance, fast switching speed, and low gate threshold voltage make it a great choice for various low voltage, high current applications. Additionally, its versatility and flexibility make it ideal for various solar energy related applications. In summary, the FQPF3N90_NL is an excellent choice for a variety of applications due to its excellent performance, low power consumption, and low cost.

The specific data is subject to PDF, and the above content is for reference

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