FQPF7N80C

FQPF7N80C Application Field and Working Principle

FQPF7N80C is an N-Channel enhancement mode MOSFET with high-current capability and high frequency switching speeds. FQPF7N80C belongs to the FETs family, specifically the one under MOSFETs – Single. It is a very powerful, efficient and cost effective switching device that is widely used in a variety of applications.

Application Field

FQPF7N80C is mainly used in Electronic switching high and low side driver applications, low side switching applications and motor speed control applications. It is also used in power conversion applicaions such as Buck and Boost converters, Inverters, Car Battery chargers, AC-DC and DC-DC converters, DC-AC converters and high side load switching applications.

The device offers high-power handling capability with reduced power dissipation. The Monolithic construction and low operating voltage of FQPF7N80C makes it ideal for DC/DC converters, high-side load switching, driver and logic level-shifting circuit.

Working Principle

FQFP7N80C is an N-channel enhancement mode power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), that are commonly used in power switching circuits. It works based on the principles of modern solid state electronics, where the gate voltage is used to control the channel and, in turn, the current flow through the device.

The FQPF7N80C basically works on the principle that when the gate voltage is applied to the gate terminal, the channel of the device is opened and the source and drain terminals are connected. This creates a “short-circuit” between the source and drain, which allows electric current to pass through. As the gate voltage is increased, the channel gets bigger and more current flows through the device.

The FQPF7N80C is designed to work on an efficient performance with low power consumption and maximum power handling capabilities. Due to its low power consumption, these FETs are very efficient and enable high yield in low rate power input.

Advantages

FQPF7N80C offers several advantages for its applications in power conversion and high-side load switching applications. The device offers low parasitic capacitance and reduces switching losses, due to its high-frequency performance. FQPF7N80C is also resilient against catastrophic events such as electrostatic discharge. It has an excellent noise immunity and supports fast switching speeds up to 20 kHz.

The device also offers superior thermal performance compared to standard FETs, with a maximum junction temperature of 150°C. Moreover, with its low threshold voltage, FQPF7N80C can be switched directly from CMOS logic for low ESCR.

FQPF7N80C is one of the most widely used FETs devices in power conversion applications due to its excellent power handling ability and its high frequency capabilities. The device is reliable, efficient and cost-effective, making it ideal for a variety of applications.