FQPF34N20L

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FQPF34N20L is a power field effect transistor (FET) specifically targeted at designers of high current, high speed switching applications. Manufactured by Fairchild Semiconductor, the FQPF34N20L is part of the Fast Switching Metal Oxide semiconductor Field Effect Transistor (MOSFET) range of power devices. Aside from its use in power applications, the FQPF34N20L is useful in synchronous rectification, high frequency power conversion, motor driver and frequency converters.

The FQPF34N20L is a N-Channel Enhancement Mode MOSFET (abbreviated as depletion MOSFET). This type of MOSFET has a single gate connected to the metal oxide semiconductor layer within the device’s package. This gate is responsible for controlling the device’s current flow, where high current can flow through the N-channel to the drain – when the gate is charged with a positive voltage. The metal oxide layer will work as an insulator when the gate is not charged, which will inhibit current flow.

The main features of the FQPF34N20L includes its low RDS(on) rating, fast switching speeds and its capability to handle high drain-source current. The typical resistance between drain and source is 0.049 ohms, meaning the device is designed for those applications that require very low resistance, such as a switch mode power supplies (SMPS) and motor controllers.

The onboard system that makes use of the FQPF34N20L can benefit from its high-frequency operation. When the device is used in these applications, it can achieve high efficiency. This can be attributed to its fast switching speed, which is rated to be less than 180nS. As the device is designed for high current ratings, it is also able to function with a drain-source voltage of up to 20V.

How the integrated MOSFET silicon structure works is by connecting the gate to the metal source. When the gate is charged, majority carriers will be detected in the metal oxide layer near the gate, thus directing the current to the drain and enabling it to flow at a much high rate. On the other hand, when the gate is not charged, the metal oxide layer works as an insulator to the source which prevents current flow.

The FQPF34N20L is available in a TO-220F package type, with its source pin connected directly to the substrate. The FQPF34N20L is designed for a maximum operating temperature of 150 degrees Celsius and can be implemented in high-power applications such as switching power supplies, motor controllers and synchronous rectification. The package style also ensures for a secure connection to other components, allowing for enhanced use of the device.

In summary, the FQPF34N20L is a specifically designed N-Channel Enhancement Mode MOSFET, manufactured by Fairchild Semiconductor. The device is designed for applications where a low RDS(on) rating and high current drain-source capabilities are required. These features, along with its fast switching speeds, opens up its use in high-power applications such as synchronous rectification, motor drivers, switching power supplies and frequency conversion.

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