FQPF19N20CYDTU

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Formed Leads
Supplier Device Package:	TO-220F-3 (Y-Forming)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	43W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	53nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	170 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>FQPF19N20CYDTU is a fast switching and high current carrying field-effect transistor (FET) manufactured by Fairchild Semiconductor, a major electronics supplier. FQPF19N20CYDTU is one of the most popular and widely used FETs currently available. It belongs to the fast switching and high power rating MOSFET (metal-oxide-semiconductor field-effect transistor) family, offering excellent switching performance and high current carrying capacity. The FQPF19N20CYDTU is widely used in audio, video, communication and computer applications where switching performance and power handling is required. Below we can discuss the FQPF19N20CYDTU’s application field and working principle.</p><p>The FQPF19N20CYDTU is mainly used in high frequency switching circuits, power amplifiers, power converters and other applications that require fast switching. It has a very good power handling capacity which is used in motor control and power supply applications such as AC/DC and DC/DC converters. Other applications include high frequency circuits such as switched-mode DC-DC converters, power transceivers, and variable frequency drives. Moreover, this FET is commonly used for RF transmission lines, RF switches, and audio power amplifiers.</p><p>The FQPF19N20CYDTU has low on-state resistance, which makes it suitable for applications where low power loss is important, such as power conversion. It also has a very low gate charge, which further reduces power consumption while increasing the device’s switching frequency capability. Additionally, it has a very low thermal resistance which ensures high temperature operation as its heat is quickly dissipated away.</p><p>The FQPF19N20CYDTU works based on the depletion-mode principle. It has three pins, source, gate, and drain. When a negative voltage is applied to the gate, electrons are drawn away from the channel region, thus forming a depleted layer between the source and drain. This depleted layer creates a resistance between the two electrodes and results in a decrease in current flow. By using a positive voltage, the electrons are attracted to the channel and a formed conduction channel between the two electrodes, allowing current to flow freely. The resistance in this channel can be adjusted by adjusting the voltage applied to the gate.</p><p>FQPF19N20CYDTU is a versatile and reliable FET used in a wide range of applications. It offers excellent switching performance and power handling capabilities with low on-state resistance, low gate charge and low thermal resistance. This makes it suitable for use in power circuits, switching applications, high frequency circuits, and variable frequency drives. Furthermore, its low voltage operation ensures its compatibility with the majority of circuits.</p>

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