FQPF2N50 Allicdata Electronics
Allicdata Part #:

FQPF2N50-ND

Manufacturer Part#:

FQPF2N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 1.3A TO-220F
More Detail: N-Channel 500V 1.3A (Tc) 20W (Tc) Through Hole TO-...
DataSheet: FQPF2N50 datasheetFQPF2N50 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 650mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQPF2N50 is a type of Field-Effect Transistor (FET) MOSFET. It is a single device that consists of a semiconductor material with two or more terminals connected to the gate, source, and drain that control current flow. It operates by applying a voltage between the gate and the source, creating an electric field that affects the current flow between the drain and the source. The current capacity in FQPF2N50 devices is 50A, with a maximum drain-to-source voltage of 500V.

The main application field for FQPF2N50 is as a power device in consumer electronics. It is commonly used in switch-mode power supplies, audio amplifiers, and motor controllers. It is a low-cost, low-power solution for many consumer and consumer-grade electrical products. Additionally, FQPF2N50 can be used in solid-state relays for protection and control of AC and DC signals.

FQPF2N50 works by having a gate voltage applied across its terminals. This supplies an electric field between the source and the drain, allowing current to flow through the device. As voltage is increased or decreased, the resistance of the device is changed to either pass or interrupt current flow. By controlling this gate voltage, the FQPF2N50 can be turned on or off, and its resistance adjusted accordingly.

FQPF2N50 is known for its low on-resistance and low gate-charge characteristics. The low on-resistance gives the device high switching speed; this makes the device ideal for power switching applications, where high levels of power need to be switched quickly and reliably. Additionally, its low gate-charge characteristics ensure that the device does not draw more current than necessary during operation, improving overall efficiency.

FQPF2N50 is one of the most popular power MOSFETs on the market, due to its combination of low cost and good performance. It is an ideal choice for applications that require medium power levels, up to 50A. The device is protected from gate-to-source overvoltage by a built-in protection circuit; this ensures that it does not fail catastrophically in the event of a surge or spike. Finally, due to its mass production, FQPF2N50 is readily available and cost-effective.

The specific data is subject to PDF, and the above content is for reference

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