FQPF3N60

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	34W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	3.6 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The FQPF3N60 is a field effect transistor (FET) that is used in a variety of applications. The FQPF3N60 is a single-P-channel enhancement-mode MOSFET. It has a drain-source breakdown voltage of 60V, a drain current of 79A, an on-state resistance of 1.77 ohm, and a gate threshold voltage of 2.5V. It is suitable for use in applications that require high frequency switching and linear control of small loads.

Application Field

The FQPF3N60 is used for a variety of applications, particularly those that require high-frequency switching and linear control of small loads. The FQPF3N60 can be used in DC-DC conversion and step-up/down circuits, motor control applications, and power interface applications. It is also used in bridge configurations for DC motor control, and in boost converters for solar energy storage systems.

Working Principle

The FQPF3N60 is a MOSFET which utilizes the transistor effect to control electrical current. A MOSFET is an insulated-gate field-effect transistor (IGFET). It is a three-terminal device, typically consisting of a source, a gate, and a drain. A voltage applied across the source and the drain creates a conductive channel between them, and the current through this channel is controlled by the voltage applied to the gate. The FQPF3N60 operates in enhancement-mode, meaning it is normally off and must be triggered by applying a voltage greater than its threshold voltage to the gate in order to turn on. The FQPF3N60 has a drain-source breakdown voltage of 60V, a drain current rating of 79A, and an on-state resistance of 1.77 ohm.

Conclusion

The FQPF3N60 is a field effect transistor (FET) that is used for a variety of applications. It is a single-P-channel enhancement-mode MOSFET, and is suitable for use in applications that require high frequency switching and linear control of small loads. It has a drain-source breakdown voltage of 60V, a drain current of 79A, an on-state resistance of 1.77 ohm, and a gate threshold voltage of 2.5V. The FQPF3N60 operates in enhancement-mode and is normally off, but can be triggered by applying a higher voltage to the gate to turn on. It can be used in DC-DC conversion and step-up/down circuits, motor control applications, power interface applications, bridge configurations for DC motor control, and in boost converters for solar energy storage systems.

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