FQPF44N08

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	41W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1430pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	34 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Overview

The FQPF44N08 is a MOSFET (metal-oxide-semiconductor field-effect transistor) that is a single-channel, N-channel depletion type. It is designed for medium- to high-power applications that require very low RDS(on) values such as robotics, switches, and power converters. This type of MOSFET is currently available from several manufacturers in various packages and sizes.

Application Field

MOSFETs are one of the most commonly used switching devices across many power applications. The FQPF44N08 is specifically designed for high-power applications that require very low resistance. This type of MOSFET is ideal for robotics, since they can be used to switch on/off motors, solenoids, and other electrically-driven components. It can also be used in applications such as power converters, switches, and other high-power electronic circuits.

Working Principle

As a metal oxide semiconductor field effect transistor, the FQPF44N08 works by controlling the current flow between two terminals of a circuit, typically used to switch on and off devices or components. It is based on the principle of a MOSFET which uses a current-controlled gate to control the current flow between its source and drain terminals. The gate is controlled by a voltage that is applied to the gate terminal. The FQPF44N08 is a single-channel, N-channel depletion type which means that when the gate voltage is 0V, the device is "on" and the resistance is at its lowest. When the gate voltage is applied, the device turns "off" and the resistance increases. When the gate voltage is again reduced to 0V, the resistance again reduces and the device turns "on". The gate voltage controls the gate-source voltage which in turn affects the current that is flowing through the device. This is called the drain current and reduces as the gate-source voltage is increased. This is known as the threshold voltage. The FQPF44N08 also has a very low RDS(on) (drain-source on-state resistance) making it ideal for medium- to high-power applications.

Conclusion

The FQPF44N08 is a MOSFET designed specifically for high-power applications that require very low resistance. It is based on the principle of a metal-oxide-semiconductor field-effect transistor, where the gate voltage is used to control the gate-source voltage and the current flowing through the device. This type of MOSFET can be used in a number of high power applications such as robotics, switches, and power converters.

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